Nanostructured bulk thermoelectric material
View Patent ↗A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nanowires, nanoparticles, or other nanostructures of the first component. The second component may comprise an electrical insulator, such as an inorganic oxide, other electrical insulator, other low thermal conductivity material, voids, air-filled gaps, and the like. Additional components may be included, for example to improve mechanical properties. Quantum size effects within the nanostructured first component can advantageously modify the thermoelectric properties of the first component. In other examples, the second component may be a thermoelectric material, and additional components may be included.
1. A thermoelectric device, comprising:
a first electrical contact;
a second electrical contact; and
a thermoelectric bulk material located within an electrical path between the first electrical contact and the second electrical contact, the thermoelectric bulk material including:
a first powdered component having a particulate form, the first powdered component being electrically conducting;
a second powdered component having a particulate form, the second powdered component having an electrical conductivity substantially less than the first powdered component,
the first and second powdered components retaining the particulate form in the bulk thermoelectric material;
the thermoelectric bulk material being a composite including nanostructures of the first powdered component,
wherein the first component is a metal.
2. A thermoelectric device, comprising:
a first electrical contact;
a second electrical contact; and
a thermoelectric bulk material located within an electrical path between the first electrical contact and the second electrical contact, the thermoelectric bulk material including:
a first powdered component having a particulate form, the first powdered component being electrically conducting;
a second powdered component having a particulate form, the second powdered component having an electrical conductivity substantially less than the first powdered component,
the first and second powdered components retaining the particulate form in the bulk thermoelectric material;
the thermoelectric bulk material including nanostructures of the first powdered component,
wherein the second component is an electrical insulator.
3. The thermoelectric device of claim 2 , wherein the first component is a semiconductor, and the second component is an electrically insulating inorganic oxide.
4. The thermoelectric device of claim 2 , wherein the first component is a semiconductor, the semiconductor forming an electrically conducting nanostructured network around the second component.
5. The thermoelectric device of claim 2 , the device providing an electrical potential between the first electrical contact and the second electrical contact when a thermal gradient extends over at least part of the device including the thermoelectric material.
6. A thermoelectric material comprising:
a first powdered component having a particulate form, the first powdered component being electrically conducting; and
a second powdered component having a particulate form, the second powdered component having an electrical conductivity substantially less than the first component,
the first and second powdered components retaining the particulate form in a thermoelectric bulk material;
the first powdered component forming an electrically conducting nanostructured network in the thermoelectric bulk material;
wherein the first component is a semiconductor, and the second component is an electrical insulator.
7. The thermoelectric material of claim 6 , wherein the thermoelectric bulk material is a thick film or material having a smallest physical dimension of greater than 1 mm.
8. The thermoelectric material of claim 6 , wherein the electrical conductivity of the first component is over 100 times greater than the electrical conductivity of the second component.
9. The thermoelectric device of claim 6 , wherein the electrically conducting nanostructured network is a three-dimensional continuous network.
10. The thermoelectric material of claim 6 , wherein the thermoelectric bulk material includes particles having an internal nanostructure of the first component.
11. The thermoelectric material of claim 6 , wherein
the first component is a semiconductor compound including selenium or tellurium, and
the second component is an electrically insulating inorganic oxide.
12. The thermoelectric material of claim 6 , wherein:
the first component is chosen from a group consisting of tellurium-containing semiconductors, selenium-containing semiconductors, and silicon-germanium alloys; and
the second component includes a material chosen from a group consisting of alumina, lanthanum cobaltate, sodium cobaltate, silica, tin oxide, zinc oxide, zirconium oxide, yttrium oxide, fullerenes, and carbon nanotubes.
13. The thermoelectric material of claim 6 , wherein the first component includes bismuth telluride, and the second component includes silica.
14. The thermoelectric material of claim 6 , wherein a thermoelectric coefficient of the first component within the thermoelectric material is enhanced by a quantum size effect.
15. The thermoelectric material of claim 6 , wherein the thermoelectric material comprises semiconductor nanoparticles and particles of an electrically insulating material.
16. A process of forming a thermoelectric material, the process comprising:
providing a powder mixture having a particulate form, the powder mixture including particles comprising an electrical conductor, and particles comprising an electrical insulator; and
pressing the powder mixture to form a thermoelectric bulk material, the formed thermoelectric bulk material retaining the particulate form and including nanostructures of the electrical conductor.
17. The process of claim 16 , wherein the electrical conductor is a semiconductor.
18. The process of claim 16 , wherein the process further includes heating the powder mixture.