SiGe differential cascode amplifier with miller effect resonator
View Patent ↗A high-power, high frequency (1–100 GHz) power amplifier, made using SiGe transistors. A differential common-emitter amplifier section supplies the voltage amplification, allowing the total voltage swing of the amplifier to be twice the breakdown voltage of the individual transistors. Current amplification is supplied by a differential common-emitter amplifier section, connected in cascode with the differential common-emitter amplifier section. Appropriately chosen resonators in the cascode connection resonate out the Miller effect, negative current feed back of the circuit at the amplifier's operational frequency, allowing the amplifier to provide high power output at the operational frequency.
1. A method of providing a high-frequency, high-power amplifier, said method comprising the steps of:
providing a first and a second transistor configured as a differential common-emitter amplifier;
providing a third and a forth transistor configured as a differential common-base amplifier; and
connecting the collector of said first transistor to the collector of said third transistor via a first resonator, and the collector of said second transistor to the collector of said forth transistor via a second resonator.
2. The method of claim 1 wherein said first resonator has a value chosen to significantly reduce current feedback via the inherent collector-base capacitance of said first transistor at an operating frequency of said high-frequency, high-power amplifier, and said second resonator has a value chosen to significantly reduce current feedback via the inherent collector-base capacitance of said second transistor at said operating frequency.
3. The method of claim 1 wherein said first resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-base capacitance of said first transistor, and wherein said second resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-base capacitance of said second transistor, thereby effectively resonating out current feedback across said first and second transistors.
4. The method of claim 2 wherein said differential configuration of said third and fourth transistors comprises providing a third resonator connected to the base of said third transistor; and providing a forth resonator connected to the base of said fourth transistor, wherein said third and forth resonators are in series with each other.
5. The method of claim 4 wherein said third resonator has a value chosen to significantly reduce current feedback via the inherent collector-emitter capacitance of said third transistor at said operating frequency, and said fourth resonator has a value chosen to significantly reduce current feedback via the inherent collector-emitter capacitance of said forth transistor at said operating frequency.
6. The method of claim 4 wherein said third resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-emitter capacitance of said third transistor, and wherein said fourth resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-emitter capacitance of said forth transistor, thereby effectively resonating out current feedback across said third and forth transistors.
7. The method of claim 1 in which said transistors are SiGe transistors.
8. The method of claim 5 further comprising providing an input signal via an input balun.
9. The method of claim 6 further comprising providing an output signal via an output balun.
10. A high-frequency, high-power amplifier, comprising:
a first and a second transistor configured as a differential common-emitter amplifier;
a third and a fourth transistor configured as a differential common-base amplifier;
a first resonator connecting the collector of said first transistor to the collector of said third transistor; and
a second resonator connecting the collector of said second transistor to the collector of said forth transistor.
11. The amplifier of claim 10 wherein said first resonator has a value chosen to significantly reduce current feedback via the inherent collector-base capacitance of said first transistor at an operating frequency of said high-frequency, high-power amplifier, and said second resonator has a value chosen to significantly reduce current feedback via the inherent collector-base capacitance of said second transistor at said operating frequency.
12. The amplifier of claim 10 wherein said first resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-base capacitance of said first transistor, and wherein said second resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-base capacitance of said second transistor, thereby effectively resonating out current feedback across said first and second transistors.
13. The amplifier of claim 11 further comprising a third resonator connected to the base of said third transistor; and a fourth resonator connected to the base of said fourth transistor, and wherein said third and fourth resonators are in series with each other.
14. The amplifier of claim 13 wherein said third resonator has a value chosen to significantly reduce current feedback via the inherent collector-emitter capacitance of said third transistor at said operating frequency, and said fourth resonator has a value chosen to significantly reduce current feedback via the inherent collector-emitter capacitance of said fourth transistor at said operating frequency.
15. The amplifier of claim 13 wherein said third resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-emitter capacitance of said third transistor, and wherein said fourth resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-emitter capacitance of said fourth transistor, thereby effectively resonating out current feedback across said third and forth transistors.
16. The amplifier of claim 10 in which said transistors are SiGe transistors.
17. A device for providing high-frequency, high-power amplification, comprising:
means for differential voltage amplification comprising a first and a second transistor configured as a differential common-emitter amplifier;
means for differential current amplification comprising a third and a fourth transistor configured as a differential common-base amplifier;
a first resonator means connecting the collector of said first transistor to the collector of said third transistor; and
a second resonator means connecting the collector of said second transistor to the collector of said fourth transistor.
18. The device of claim 17 wherein said first resonator has a value chosen to significantly reduce current feedback via the inherent collector-base capacitance of said first transistor at an operating frequency of said high-frequency, high-power amplifier, and said second resonator has a value chosen to significantly reduce current feedback via the inherent collector-base capacitance of said second transistor at said operating frequency.
19. The device of claim 18 wherein said first resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-base capacitance of said first transistor, and wherein said second resonator has a value that is substantially equal to the square of the amplifier operational frequency divided by the value of the inherent collector-base capacitance of said second transistor, thereby effectively resonating out current feedback across said first and second transistors.
20. The device of claim 17 in which said transistors are SiGe transistors.