Thick laser-scribed GaN-on-sapphire optoelectronic devices
A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.
1 . A method for dicing a device wafer disposed on sapphire, the method comprising:
laser scribing a sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer; and
separating the sapphire wafer along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines, each device die including (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns.
2 . The dicing method as set forth in claim 1 , wherein the laser scribing produces laser scribe lines passing through a thickness of between 25% and 66% of the wafer thickness.
3 . The dicing method as set forth in claim 2 , wherein the sapphire wafer has a thickness greater than 125 microns and thinner than 600 microns.
4 . The dicing method as set forth in claim 2 , wherein each laser scribe line includes two laser scribe line components on opposite sides of the sapphire wafer.
5 . The dicing method as set forth in claim 2 , wherein each device has a lateral dimension at least twice as large as the thickness of the sapphire wafer.
6 . The dicing method as set forth in claim 2 , wherein the devices are GaN-based light emitting diode (LED) devices.
7 . The dicing method as set forth in claim 1 , wherein the laser scribing produces laser scribe lines that pass entirely through the thickness of the sapphire wafer such that the laser scribing effectuates the separating without subsequent fracturing.
8 . The dicing method as set forth in claim 1 , wherein the method does not include thinning the sapphire substrate.
9 . A device die comprising:
an electronic or optoelectronic device; and
a sapphire substrate supporting the electronic or optoelectronic device, the sapphire substrate having a thickness greater than 125 microns and sides generated by laser scribing.
10 . The device die as set forth in claim 9 , wherein the device is a GaN-based LED device.
11 . The device die as set forth in claim 10 , wherein the GaN-based LED device has lateral dimensions at least twice as large as the thickness of the sapphire wafer.
12 . The device die as set forth in claim 10 , wherein the sapphire substrate has a thickness of at least 400 micron.
13 . A GaN LED device die comprising:
a GaN-based LED device; and
a sapphire substrate supporting the GaN-based LED device, the sapphire substrate having (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection and (ii) sides generated by laser scribing.
14 . The GaN LED device die as set forth in claim 13 , wherein the sapphire substrate has a thickness of at least 400 micron.
15 . The GaN LED device die as set forth in claim 13 , wherein the sapphire substrate has not been thinned.
16 . The GaN LED device die as set forth in claim 13 , wherein the GaN-based LED device has a lateral dimension of at least 350 micron.
17 . The GaN LED device die as set forth in claim 13 , wherein the sapphire substrate is shaped by the laser scribing.