Semiconductor nanocrystal complexes comprising a metal coating and methods of making same
View Patent ↗A semiconductor nanocrystal complex including a metal layer formed on the outer surface of a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core and a method for preparing a nanocrystal complex comprising forming a metal layer on a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core. The metal layer may passivate the surface of the semiconductor nanocrystal core and protect the semiconductor nanocrystal core from the effects of oxidation. Also provided is a semiconductor nanocrystal complex with a shell grown onto the metal layer formed on the semiconductor nanocrystal core. In this embodiment, the metal layer may prevent lattice mismatch between the semiconductor shell and the semiconductor nanocrystal core.
1. A semiconductor nanocrystal complex comprising: a semiconductor nanocrystal core having an outer surface and having a diameter between 1 nanometers and 20 nanometers; and a metal layer formed on the outer surface of the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core, wherein no linking molecules are used to attach the metal layer to the core.
2. The semiconductor nanocrystal complex of claim 1 , further comprising a shell comprising a semiconductor material overcoating the metal layer.
3. The semiconductor nanocrystal complex of claim 2 , wherein the semiconductor material of the shell has a bulk bandgap greater than that of the semiconductor nanocrystal core.
4. The semiconductor nanocrystal complex of claim 2 , wherein the metal layer reduces lattice mismatch between the semiconductor nanocrystal core and the shell.
5. The semiconductor nanocrystal complex of claim 2 , wherein the metal layer limits the diffusion rate of oxygen molecules to the semiconductor nanocrystal core.
6. The semiconductor nanocrystal complex of claim 2 , wherein the semiconductor nanocrystal core comprises CdTe and the shell comprises ZnS.
7. The semiconductor nanocrystal complex of claim 2 , wherein the nanocrystal complex comprises CdTe, the shell comprises ZnS, and the metal layer comprises Zn and Cd.
8. The semiconductor nanocrystal complex of claim 1 , wherein the metal layer comprises at least two metals.
9. The semiconductor nanocrystal complex of claim 8 , wherein the at least two metals is two metals arranged in an alternating pattern.
10. The semiconductor nanocrystal complex of claim 1 , wherein the metal layer limits the diffusion rate of oxygen molecules to the semiconductor nanocrystal core.
11. The semiconductor nanocrystal complex of claim 1 , wherein the metal layer includes a metal of the semiconductor nanocrystal core.
12. The semiconductor nanocrystal complex of claim 1 , wherein the semiconductor nanocrystal core comprises CdTe.
13. A method of making a semiconductor nanocrystal complex comprising: synthesizing a semiconductor nanocrystal core having an outer surface and having a diameter between 1 nanometers and 20 nanometers; and forming a metal layer on the outer surface of the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core, wherein no linking molecules are used to attach the metal layer to the core.
14. The method of claim 13 , further comprising overcoating the metal layer with a shell comprising a semiconductor material.
15. The method of claim 14 , wherein the semiconductor material of the shell has a bulk bandgap greater than that of the semiconductor nanocrystal core.
16. The method of claim 14 , wherein the metal layer reduces lattice mismatch between the semiconductor nanocrystal core and the shell.
17. The method of claim 14 , wherein the metal layer limits the diffusion rate of oxygen molecules to the semiconductor nanocrystal core.
18. The method of claim 14 , wherein the semiconductor nanocrystal complex comprises CdTe, the shell comprises ZnS, and the metal layer comprises Zn and Cd.
19. The method of claim 13 wherein the metal layer comprises at least two metals.
20. The method of claim 19 , wherein the at least two metals is two metals arranged in an alternating pattern.
21. The method of claim 13 , wherein the metal layer limits the diffusion rate of oxygen molecules to the semiconductor nanocrystal core.
22. The method of claim 13 , wherein the metal layer includes a metal of the semiconductor nanocrystal core.
23. The method of claim 13 , wherein the semiconductor nanocrystal core comprises CdTe and the metal layer comprises Zn and Cd.
24. A semiconductor nanocrystal complex made according to the method of claim 13 .