Methods of making a three terminal magnetic sensor having a collector region electrically isolated from a carrier substrate body
View Patent ↗In one illustrative example, a three terminal magnetic sensor includes a collector region made of a semiconductor material, a base region, and an emitter region. An insulator layer is formed between the collector region and a carrier substrate body which carries the three terminal magnetic sensor. The insulator layer serves to reduce a capacitance otherwise present between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor. Thus, the insulator layer electrically isolates the collector region from the carrier substrate body. The structure may be formed through use of a separation by implanting oxygen (SIMOX) technique or a wafer-bonding technique, as examples.
1. A method of forming a three terminal magnetic sensor device for use in a data storage device which includes a slider body, the method comprising:
providing the slider body which comprises a semiconductor material;
forming an insulator layer in between the slider body and a collector region of the three terminal magnetic sensor device;
forming, over the collector region, a base region of the three terminal magnetic sensor device;
forming, over the base region, an emitter region of the three terminal magnetic sensor device; and
wherein the insulator layer is formed so as to electrically isolate the collector region from the slider body, so that a reduced capacitance is provided between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor.
2. The method of claim 1 , wherein the act of forming the insulator layer in between the slider body and the collector region comprises the further acts of:
performing an oxygen or nitrogen ion implantation over a surface of the slider body; and
annealing the slider body.
3. The method of claim 1 , wherein the act of forming the insulator layer in between the slider body and the collector region comprises a separation by implanting oxygen (SIMOX) technique.
4. The method of claim 1 , wherein the insulator layer comprises a continuous buried-oxide (BOX) layer within the slider body.
5. The method of claim 1 , wherein the act of forming the insulator layer in between the slider body and the collector region comprises the further act of:
performing a wafer bonding process.
6. The method of claim 1 , wherein the act of forming the insulator layer in between the slider body and the collector region comprises the further act of:
bonding a first wafer over a second wafer which has at least part of the insulator layer.
7. A method of forming a three terminal magnetic sensor device for use in a data storage device which includes a slider body, comprising:
providing the slider body which comprises a semiconductor material;
forming an insulator layer in between the slider body and a collector region of the three terminal magnetic sensor device by performing a separation by implanting oxygen technique which includes the acts of:
performing an oxygen or nitrogen ion implantation over a surface of the slider body;
annealing the slider body;
forming, over the collector region, a base region of the three terminal magnetic sensor device;
forming, over the base region, an emitter region of the three terminal magnetic sensor device; and
wherein the insulator layer is formed so as to electrically isolate the collector region from the slider body, so that a reduced capacitance is provided between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor.
8. The method of claim 7 , wherein the insulator layer comprises a continuous buried-oxide (BOX) layer within the slider body.
9. A method of forming a three terminal magnetic sensor device for use in a data storage device which includes a slider body, comprising:
providing the slider body which comprises a semiconductor material;
forming an insulator layer in between the slider body and a collector region of the three terminal magnetic sensor device by performing a wafer bonding process which includes the act of:
bonding a first wafer over a second wafer which has at least part of the insulator layer to be formed;
forming, over the collector region, a base region of the three terminal magnetic sensor device;
forming, over the base region, an emitter region of the three terminal magnetic sensor device; and
wherein the insulator layer is formed so as to electrically isolate the collector region from the slider body, so that a reduced capacitance is provided between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor.