Nitride semiconductor laser device
View Patent ↗A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
1. A nitride semiconductor laser device comprising:
a nitride semiconductor laser element having a resonator end surface; and
a stem having said nitride semiconductor laser element, wherein
said nitride semiconductor laser element is enclosed within a cap that is joined to said stem, and
an atmosphere hermetically sealed within said cap the atmosphere having a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm, wherein
said atmosphere comprises at least one selected from a group consisting of helium, argon, and nitrogen, and said atmosphere has a pressure higher than 100 kPa,
wherein the nitride semiconductor laser element is capable of emitting light with a wavelength of at most 420 nm.
2. The nitride semiconductor laser device according to claim 1 , wherein
said atmosphere includes helium.
3. The nitride semiconductor laser device according to claim 1 , wherein
said atmosphere includes nitrogen.
4. The nitride semiconductor laser device according to claim 2 , wherein
said atmosphere has a pressure higher than 100 kPa.
5. The nitride semiconductor laser device according to claim 3 , wherein
said atmosphere has a pressure higher than 100 kPa.
6. The nitride semiconductor laser device according to claim 1 , wherein
said cap has a window and said window has a thickness of at least 0.5 mm and at most 1.0 mm.
7. The nitride semiconductor laser device according to claim 1 , wherein
said cap is joined to said stem with a metal interposed therebetween.
8. The nitride semiconductor laser device according to claim 1 , wherein
a heat sink having said nitride semiconductor laser element is provided within said cap.
9. The nitride semiconductor laser device according to claim 1 , wherein
a light detecting element for detecting a laser beam from said nitride semiconductor laser element is provided within said cap.
10. The nitride semiconductor laser device according to claim 1 , wherein the atmosphere comprises at least one selected from a group consisting of helium, argon, and nitrogen, and said atmosphere has a pressure higher than 100 kPa.
11. The nitride semiconductor laser device according to claim 1 , further including a window in said cap for allowing a laser beam emitted from said nitride semiconductor laser element, wherein
said window is larger than a hole of said cap, and
said window is mounted from the inside of said cap so as to cover said hole.