Solid-state image sensing device and camera
View Patent ↗A solid-state imaging device includes a source-follower amplifier having a driver transistor and a load circuit connected to the driver transistor. The load circuit is structured by a first MOS transistor having a gate with a fixed potential, and a load device connected to a source of the first MOS transistor. Furthermore, the load circuit of the source-follower amplifier is structured by a plurality of serially connected MOS transistors. Furthermore, by adapting a structure using a current mirror circuit, load conductance is reduced.
1. A solid-state imaging device comprising:
a source-follower amplifier having a driver transistor; and
a load circuit which is connected to the driver transistor, said load circuit includes:
a first metal-oxide semiconductor (MOS) transistor having a gate with a fixed potential; and
a load device which is connected to a source of said first MOS transistor and includes a second MOS transistor,
wherein the source of said first MOS transistor is connected to a drain of the second MOS transistor,
the source of the first MOS transistor is connected to a gate and the drain of the second MOS transistor, and
a channel width of the first MOS transistor and a channel width of the second MOS transistor are equal.
2. The solid-state imaging device according to claim 1 , wherein said source-follower amplifier is included as part of a plurality of cascade-connected source-follower amplifiers arranged in stages.
3. The solid-state imaging device according to claim 1 ,
wherein said load device includes a plurality of serially connected MOS transistors each of which has a drain and a source, the drain of one of the plurality of serially connected MOS transistors preceding in the serial connection being connected to the source of another of the plurality of serially connected MOS transistors immediately following in the serial connection,
each of the plurality of serially connected MO S transistors has a gate connected to the drain, the plurality of serially connected MOS transistors including the second MOS transistor, and
channel widths of the plurality of serially connected MOS transistors are equal.
4. The solid-state imaging device according to claim 1 ,
wherein a gate length of a MOS transistor other than the first MOS transistor is greater than a gate length of the first MOS transistor.
5. The solid-state imaging device according to claim 1 ,
wherein a threshold voltage of a MOS transistor other than the first MOS transistor is higher than a threshold voltage of the first MOS transistor.
6. The solid-state imaging device according to claim 1 ,
wherein a gate dielectric film thickness of a MOS transistor other than the first MOS transistor is greater than a gate dielectric film thickness of the first MOS transistor.
7. The solid-state imaging device according to claim 1 ,
wherein a gate length, a threshold voltage, and a gate dielectric film thickness of a MOS transistor other than the first MOS transistor are respectively equal to a gate length, a threshold voltage, and a gate dielectric film thickness of said first MOS transistor.
8. A camera comprising a solid-state imaging device,
the solid-state imaging device comprising:
a source-follower amplifier having a driver transistor; and
a load circuit connected to the driver transistor, said load circuit includes:
a first MOS transistor having a gate with a fixed potential; and
a load device which is connected to a source of said first MOS transistor, and includes a second MOS transistor,
wherein the source of said first MOS transistor is connected to a drain of the second MOS transistor,
the source of first MOS transistor is connected to a gate and the drain of the second MOS transistor, and
a channel width of the first MOS transistor and a channel width of the second MOS transistor are equal.