IP Library Granted Patent US 7,041,415
Granted Patent B2
US 7,041,415 · App. 11/127,461 · Granted May 9, 2006

Nonaqueous secondary battery, method for making negative electrode component therefor, and apparatuses for evaluating and making graphite material for negative electrode component

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,041,415
App. No.
11/127,461
Granted
May 9, 2006
Kind
B2
Abstract

A negative electrode of a nonaqueous secondary battery is formed of a carbonaceous material. The ratio RG=Gs/Gb of the degree of graphitization Gs of the carbonaceous material, determined by a surface-enhanced Raman spectrum, to the degree of graphitization Gb, determined by a Raman spectrum measured using argon laser light, is at least 4.5. Alternatively, the carbonaceous material has a peak in a wavelength range above 1,360 cm −1 in a surface-enhanced Raman spectrum which is measured by the same surface-enhanced Raman spectrum. The deterioration of the nonaqueous secondary battery is suppressed during use in high-temperature environments and high capacity is maintained for long periods.

Claims (8)

1. A method for making a negative electrode component used in a nonaqueous secondary battery comprising the step of annealing natural graphite having a rhombic structure at a temperature of at least 2,000° C. to produce a negative electrode comprising a negative electrode comprising a carbonaceous material in which the ratio RG=Gs/Gb of the degree of graphitization Gs of the carbonaceous material, determined by a surface-enhanced Raman spectrum, to the degree of graphitization Gb, determined by a Raman spectrum measured using argon laser light, is at least 4.5, based on the following conditions:

Gb=Hbb/Hba ; and

Gs=Hsb/Hsa;

wherein Hba is the height of a peak lying in a range of 1,580 cm −1 to 1,620 cm −1 in a Raman spectrum which is measured using an argon laser Raman spectrometer of a wavelength of 514.5 nm and a wavelength resolution of 4 cm −1 ;

Hbb is the height of a peak lying in a range of 1,350 cm−1 to 1,400 cm−1 in a Raman spectrum which is measured using an argon laser Raman spectrometer of a wavelength of 514,5 nm and a wavelength resolution of 4 cm−1;

Hsa is the height of a peak lying in a range of 1,580 cm −1 to 1.620 cm −1 in a surface-enhanced Raman spectrum which is measured using an argon laser Raman spectrometer of a wavelength of 514,5 nm and a wavelength resolution of 4 cm−1 when silver having a thickness of 10 nm is deposited on the carbonaceous material; and

Hsb is the height of a peak lying in a range of 1,350 cm −1 to 1,400 cm −1 in a surface-enhanced Raman spectrum which is measured using an argon laser Raman spectrometer of a wavelength of 514,5 nm and a wavelength resolution of 4 cm −1 when silver having a thickness of 10 nm is deposited on the carbonaceous material.

2. A method for making a negative electrode component used in a nonaqueous secondary battery comprising the step of annealing natural graphite having a rhombic structure at a temperature of at least 2,000° C. to produce a carbonaceous material having a peak in a wavelength range above 1,360 cm −1 in a surface-enhanced Raman spectrum which is measured using an argon laser Raman spectrometer of a wavelength of 514,5 nm and a wavelength resolution of 4 cm −1 when silver having a thickness of 10 nm is deposited on the carbonaceous material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2018
From: TOHOKU MURATA MANUFACTURING CO., LTD
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 045103/0835 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2018
From: SONY CORPORATION
To: TOHOKU MURATA MANUFACTURING CO.,LTD
Reel/Frame 045104/0001 →