Resist material and pattern formation method

1. A resist material comprising a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2:

wherein R 1 , R 2 , R 3 , R 7 and R 8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.

2. The resist material of claim 1 ,

wherein said base polymer further includes an acid generator for generating an acid through irradiation with light.

3. The resist material of claim 2 ,

wherein said base polymer further includes a dissolution inhibitor for inhibiting dissolution of said base polymer.

4. The resist material of claim 1 ,

wherein said compound including said copolymer has a structure in which said first unit and said second unit are alternately arranged.

5. The resist material of claim 1 ,

wherein said protecting group released by an acid is an acetal group.

6. The resist material of claim 5 ,

wherein said acetal group is an alkoxyethyl group or an alkoxymethyl group.

7. The resist material of claim 6 ,

wherein said alkoxyethyl group is an adamantyloxyethyl group, a t-butyloxyethyl group, an ethoxyethyl group or a methoxyethyl group, and

said alkoxymethyl group is an adamantyloxymethyl group, a t-butyloxymethyl group, an ethoxymethyl group or a methoxymethyl group.

8. A pattern formation method comprising the steps of:

forming a resist film having a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 3 and a second unit represented by a general formula of the following Chemical Formula 4;

performing pattern exposure by selectively irradiating said resist film with exposing light of high energy beams of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or not shorter than a 1 nm band and not longer than a 30 nm band or electron beams; and

forming a resist pattern by developing said resist film after the pattern exposure:

wherein R 1 , R 2 , R 7 and R 8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.

9. The pattern formation method of claim 8 ,

wherein said base polymer further includes an acid generator for generating an acid through irradiation with light.

10. The pattern formation method of claim 9 ,

wherein said base polymer further includes a dissolution inhibitor for inhibiting dissolution of said base polymer.

11. The pattern formation method of claim 8 ,

wherein said compound including said copolymer has a structure in which said first unit and said second unit are alternately arranged.

12. The pattern formation method of claim 8 ,

wherein said protecting group released by an acid is an acetal group.

13. The pattern formation method of claim 8 ,

wherein said exposing light is KrF laser, ArF laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or soft X-rays.

14. The pattern formation method of claim 8 ,

wherein said base polymer has a trifluoromethyl group on a side chain thereof.

15. A pattern formation method comprising the steps of:

forming a resist film having a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6;

providing a liquid onto said resist film;

performing pattern exposure by selectively irradiating said resist film with exposing light of high energy beams of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or not shorter than a 1 nm band and not longer than a 30 nm band or electron beams; and

forming a resist pattern by developing said resist film after the pattern exposure:

wherein R 1 , R 2 , R 3 , R 7 and R 8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.

16. The pattern formation method of claim 15 ,

wherein said base polymer further includes an acid generator for generating an acid through irradiation with light.

17. The pattern formation method of claim 16 ,

wherein said base polymer further includes a dissolution inhibitor for inhibiting dissolution of said base polymer.

18. The pattern formation method of claim 15 ,

wherein said compound including said copolymer has a structure in which said first unit and said second unit are alternately arranged.

19. The pattern formation method of claim 15 ,

wherein said protecting group released by an acid is an acetal group.

20. The pattern formation method of claim 15 ,

wherein said liquid is water or perfluoropolyether.

21. The pattern formation method of claim 15 ,

wherein said exposing light is KrF laser, ArF laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or soft X-rays.

22. The pattern formation method of claim 15 ,

wherein said base polymer has a trifluoromethyl group on a side chain thereof.