Resist material and pattern formation method
View Patent ↗A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.
1. A resist material comprising a base polymer containing a compound including a unit represented by a general formula of the following Chemical Formula 1:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 6 is a group having a cyclic ester compound or a group having a compound including hexafluoroisopropyl alcohol,
wherein said group having a cyclic ester compound includes a unit represented by any of general formulas of the following Chemical Formula 2:
and wherein said group having a compound including hexafluoroisopropyl alcohol includes a unit represented by any of general formulas of following Chemical Formula 4:
2. The resist material of claim 1 ,
wherein said base polymer further includes an acid generator for generating an acid through irradiation with light.
3. The resist material of claim 2 ,
wherein said base polymer further includes a dissolution inhibitor for inhibiting dissolution of said base polymer.
4. The resist material of claim 1 ,
wherein said protecting group released by an acid is an acetal group.
5. The resist material of claim 4 ,
wherein said acetal group is an alkoxyethyl group or an alkoxymethyl group.
6. The resist material of claim 5 ,
wherein said alkoxyethyl group is an adamantyloxyethyl group, a t-butyloxyethyl group, an ethoxyethyl group or a methoxyethyl group, and
said alkoxymethyl group is an adamantyloxymethyl group, a t-butyloxymethyl group, an ethoxymethyl group or a methoxymethyl group.
7. A pattern formation method comprising the steps of:
forming a resist film containing a base polymer including a compound having a unit represented by a general formula of the following Chemical Formula 5;
performing pattern exposure by selectively irradiating said resist film with exposing light of high energy beams of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or not shorter than a 1 nm band and not longer than a 30 nm band or electron beams; and
forming a resist pattern by developing said resist film after the pattern exposure:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 6 a group having a cyclic ester compound or a group having a compound including hexafluoroisopropyl alcohol,
wherein said group having a cyclic ester compound includes a unit represented by any of general formulas of the following Chemical Formula 6:
and wherein said group having a compound including hexafluoroisopropyl alcohol includes a unit represented by any of general formulas of the following Chemical Formula 8:
8. The pattern formation method of claim 7 ,
wherein said base polymer further includes an acid generator for generating an acid through irradiation with light.
9. The pattern formation method of claim 7 ,
wherein said protecting group released by an acid is an acetal group.
10. The pattern formation method of claim 7 ,
wherein said exposing light is KrF laser, ArF laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or soft X-rays.
11. The pattern formation method of claim 7 ,
wherein said base polymer has a trifluoromethyl group on a side chain thereof.
12. A pattern formation method comprising the steps of:
forming a resist film containing a base polymer including a compound having a unit represented by a general formula of the following Chemical Formula 9;
providing a liquid onto said resist film;
performing pattern exposure by selectively irradiating said resist film with exposing light of high energy beams of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or not shorter than a 1 nm band and not longer than a 30 nm band or electron beams; and
forming a resist pattern by developing said resist film after the pattern exposure:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R 5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R 6 is a group having a cyclic ester compound or a group having a compound including hexafluoroisopropyl alcohol,
wherein said group having a cyclic ester compound includes a unit represented by any of general formulas of the following Chemical Formula 10:
and wherein said group having a compound including hexafluoroisopropyl alcohol includes a unit represented by any of general formulas of the following Chemical Formula 12:
13. The pattern formation method of claim 12 ,
wherein said base polymer further includes an acid generator for generating an acid through irradiation with light.
14. The pattern formation method of claim 12 ,
wherein said protecting group released by an acid is an acetal group.
15. The pattern formation method of claim 12 ,
wherein said liquid is water or perfluoropolyether.
16. The pattern formation method of claim 12 ,
wherein said exposing light is KrF laser, ArF laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or soft X-rays.
17. The pattern formation method of claim 12 ,
wherein said base polymer has a trifluoromethyl group on a side chain thereof.