Stable memory with high mobility cell devices

1. A random access memory, comprising:

a logic circuit coupled to a potential of a column having at least one memory cell, the logic circuit being configured to adjust the potential for the at least one memory cell in the column in accordance with a control signal; and

a control circuit coupled to the logic circuit, the control circuit being configured to generate the control signal in accordance with an operation type and whether the column is selected, such that the logic circuit selects the potential in accordance with the control signal.

2. The memory as recited in claim 1 , wherein the logic circuit includes two transistors coupled in parallel.

3. The memory as recited in claim 2 , wherein the two transistors include a same type having different threshold voltages.

4. The memory as recited in claim 2 , wherein gates of the two transistors receive the control signal.

5. The memory as recited in claim 1 , wherein the logic circuit includes an NFET and a PFET.

6. The memory as recited in claim 1 , wherein the control circuit includes an inverter, which is enabled by an operation type signal and inverts a column select type signal to provide the control signal.

7. The memory as recited in claim 1 , wherein the control circuit includes a NAND gate, which receives an operation type signal and a column select type signal as inputs to provide the control signal.

8. The memory as recited in claim 1 , wherein the logic circuit includes a transistor and the potential is reduced or increased by a threshold voltage drop across the transistor when the column controlled by the logic circuit is selected and the operation of the column is a write operation.

9. The memory as recited in claim 1 , wherein the potential is a supply voltage and the supply voltage is reduced by a threshold voltage drop across a transistor of the logic circuit.

10. The memory as recited in claim 9 , further comprising a data driver coupled to a bitline of the column wherein a supply voltage to the data driver is greater than the supply voltage of the memory cell during a write operation.

11. The memory as recited in claim 1 , wherein the memory cell includes high mobility transistor devices which are responsive to the potential supplied by the logic circuit.

12. The memory as recited in claim 1 , wherein the potential is a ground potential and the potential is increased by a threshold voltage drop across a transistor of the logic circuit.

13. A random access memory, comprising:

a logic circuit having at least two transistors coupled in parallel, the logic circuit being coupled to a potential of a column having at least one memory cell, the logic circuit adjusting the potential for the at least one memory cell in the column in accordance with a control signal;

a control circuit having an output coupled to gates of the at least two transistors, the control circuit generating the control signal in accordance with an operation type and whether the column is selected, such that the logic circuit adjusts the potential in accordance with the control signal.

14. The memory as recited in claim 13 , wherein the logic circuit includes two transistors coupled in parallel.

15. The memory as recited in claim 14 , wherein the two transistors are of a same type having different threshold voltages.

16. The memory as recited in claim 14 , wherein gates of the two transistors receive the control signal.

17. The memory as recited in claim 13 , wherein the control circuit includes an inverter, which is enabled by an operation type signal and inverts a column select type signal to provide the control signal.

18. The memory as recited in claim 13 , wherein the control circuit includes a NAND gate, which receives an operation type signal and a column select type signal as inputs to provide the control signal.

19. The memory as recited in claim 13 , wherein the logic circuit includes a transistor and the potential is reduced or increased by a threshold voltage drop across the transistor when the column controlled by the logic circuit is selected and the operation of the column is a write operation.

20. The memory as recited in claim 13 , wherein the potential is a supply voltage and the supply voltage is reduced by a threshold voltage drop across a transistor of the logic circuit.

21. The memory as recited in claim 13 , further comprising a data driver coupled to a bitline of the column wherein a supply voltage to the data driver is greater than the supply voltage of the memory cell during a write operation.

22. The memory as recited in claim 13 , wherein the memory cell includes high mobility transistor devices which are responsive to the potential supplied by the logic circuit.

23. The memory as recited in claim 13 , wherein the potential is a ground potential and the potential is increased by a threshold voltage drop across a transistor of the logic circuit.

24. A static random access memory, comprising:

a plurality of memory cells arranged in columns, each memory cells including a plurality of high mobility transistors cross-coupled to store data;

a first logic circuit coupled to a column power supply and a power supply node for the memory cells of that column, the logic circuit for adjusting the supply voltage for the memory cells in the column in accordance with a control signal;

a second logic circuit coupled to a column ground and a cell ground node for the memory cells of that column, the logic circuit for adjusting a ground potential for the memory cells in the column in accordance with the control signal; and

a control circuit having an output coupled to the first and second logic circuits to generate the control signal in accordance with an operation type and whether the column is selected, such that the first and second logic circuit adjust the supply voltage and/or the ground potential in accordance with the control signal.

25. The memory as recited in claim 24 , wherein the first and second logic circuits each include two transistors coupled in parallel.

26. The memory as recited in claim 24 , wherein the control circuit includes an inverter, which is enabled by an operation type signal and inverts a column select type signal to provide the control signal.

27. The memory as recited in claim 24 , wherein the control circuit includes a NAND gate, which receives an operation type signal and a column select type signal as inputs to provide the control signal.

28. The memory as recited in claim 24 , wherein the supply voltage and/or ground potential is/are adjusted by a threshold voltage drop across a transistor when the column controlled by the logic circuit is selected and the operation of the column is a write operation.

29. The memory as recited in claim 24 , further comprising a data driver coupled to a bitline of the column wherein a supply voltage to the data driver is greater than the supply voltage of the memory cell during a write operation.

30. The memory as recited in claim 24 , wherein the logic circuit includes transistors of a same type coupled in parallel and including different threshold voltages.