Plasma treatment of anodic oxides for electrolytic capacitors
View Patent ↗An oxygen plasma process for treating a dielectric oxide layer, particularly an anodic oxide, subsequent to its incorporation into an electrolytic capacitor is described. The present treatment reduces DC leakage and improves shelf life stability of the resulting capacitor in comparison to anodic oxides treated in a conventional manner. This is important for critical applications such as implantable cardioverter defibrillators where capacitor charging time and charge/discharge energy efficiency are critical.
1. An anode for incorporation into a capacitor, the anode comprising:
a) a valve metal;
b) a dielectric oxide layer provided on the valve metal, wherein the dielectric oxide is characterized as having first been formed by anodizing the valve metal in an electrolyte; and
c) followed by treating the thusly formed dielectric oxide in a plasma process to reduce oxygen deficiencies therein.
2. The anode of claim 1 wherein the plasma process provides an oxygen ion density of at least about 10 9 ion/cm 3 .
3. The anode of claim 1 wherein the plasma gases are in the form of either O 2 or N 2 O.
4. The anode of claim 1 wherein the plasma process is at a power of about 500 watts to about 1,100 watts.
5. The anode of claim 1 wherein the dielectric oxide layer is about 0.01 μm to about 2.0 μm thick.
6. The anode of claim 1 wherein the valve metal is selected from the group consisting of niobium, tantalum, aluminum, titanium, zirconium, and mixtures thereof.
7. The anode of claim 1 wherein the temperature of the plasma process ranges from ambient to about 500° C.
8. The anode of claim 1 wherein the dielectric oxide is exposed to the plasma process for a time ranging from about one minute to a few hours.
9. An anode for incorporation into a capacitor, the anode comprising:
a) a tantalum body;
b) a dielectric tantalum oxide layer provided thereon, wherein the dielectric oxide is characterized as having first been formed by anodizing the valve metal in an electrolyte; and
c) following by treating the thusly formed dielectric oxide in a plasma process to reduce oxygen deficiencies therein.
10. Te anode of claim 9 wherein the dielectric tantalum oxide layer has a thickness of about 0.1 μm or more.
11. A process to form an anode for a capacitor, comprising the steps of:
a) providing a valve metal;
b) first forming a dielectric oxide layer on a surface of the valve metal; and
c) then exposing the dielectric oxide layer to a plasma process to reduce oxygen deficiencies therein.
12. The process of claim 11 including providing the plasma process having an oxygen ion density of at least about 10 9 ion/cm 3 .
13. The process of claim 11 including providing a plasma gas in the form of either O 2 or N 2 O.
14. The process of claim 11 including performing the plasma process at a power of about 500 watts to about 1,100 watts.
15. The process of claim 11 including providing the dielectric oxide layer of a thickness ranging from about 0.01 μm to about 2.0 μm.
16. The process of claim 11 including selecting the valve metal from the group consisting of niobium, tantalum, aluminum, titanium, zirconium, and mixtures thereof.
17. The process of claim 11 including forming the dielectric oxide by a procedure selected from anodizing the valve metal in an electrolyte, physical vapor deposition, thermal oxidation, oxygen plasma deposition, and combinations thereof.
18. The process of claim 11 including providing the temperature of the plasma process ranging from ambient to about 500° C.
19. The process of claim 11 including exposing the dielectric oxide to the plasma process for a time ranging from about one minute to a few hours.