Liquid crystal display device and method of fabricating the same

1. A method of fabricating a liquid crystal display device, comprising:

providing a first substrate;

forming a conductive layer on a rear surface of a second substrate;

forming a black matrix layer on a front surface of the second substrate;

heating simultaneously the black matrix and the conductive layer to bake the black matrix layer and anneal the conductive layer;

forming a color filter layer on the front surface of the second substrate; and

attaching the first and second substrates.

2. The method according to claim 1 , wherein the conductive layer includes indium tin oxide.

3. The method according to claim 1 , wherein the black matrix layer includes a black resin.

4. The method according to claim 3 , wherein forming the black matrix layer comprises:

depositing a black resin on the front surface of the second substrate;

irradiating light onto portions of the black resin using a mask; and

developing the irradiated portions of the black resin.

5. The method according to claim 1 , wherein the black matrix includes metal.

6. The method according to claim 5 , wherein the black matrix includes at least one of Cr and CrOx.

7. The method according to claim 5 , wherein forming the black matrix layer comprises:

depositing a metal on the front surface of the second substrate; and

etching portions of the metal by using a photoresist.

8. The method according to claim 1 , wherein the baking and annealing are performed at a temperature of about 210° to about 230° C.

9. The method according to claim 1 , wherein providing the first substrate comprises:

forming a plurality of data and gate lines defining a plurality of pixel regions on the first substrate;

forming a thin film transistor within the pixel region; and

forming at least one pair of electrodes within the pixel region.

10. A liquid crystal display device fabricated by a method, comprising:

providing a first substrate;

forming a conductive layer on a rear surface of a second substrate;

forming a black matrix layer on a front surface of the second substrate;

heating simultaneously the black matrix and the conductive layer to bake the black matrix layer and anneal the conductive layer;

forming a color filter layer on the front surface of the second substrate; and

attaching the first and second substrates.

11. The device according to claim 10 , wherein the conductive layer includes indium tin oxide.

12. The device according to claim 10 , wherein the black matrix layer includes a black resin.

13. The device according to claim 10 , wherein forming the black matrix layer comprises:

depositing a black resin on the front surface of the second substrate;

irradiating light onto portions of the black resin using a mask; and

developing the irradiated portions of the black resin.

14. The device according to claim 10 , wherein the black matrix includes metal.

15. The device according to claim 10 , wherein the black matrix includes at least one of Cr and CrOx.

16. The device according to claim 10 , wherein forming the black matrix layer comprises:

depositing a metal on the front surface of the second substrate; and

etching portions of the metal by using a photoresist.

17. The device according to claim 10 , wherein the baking and annealing are performed at a temperature of about 210° to about 230° C.

18. The device according to claim 10 , wherein providing the first substrate comprises:

forming a plurality of data and gate lines defining a plurality of pixel regions on the first substrate;

forming a thin film transistor within the pixel region; and

forming at least one pair of electrodes within the pixel region.