Pattern forming method
View Patent ↗A pattern forming method includes (a) a step of forming a resist film on a substrate, (b) a pre-wet step of spreading a pre-wet solution on the resist film and after a fixed time, removing the pre-wet solution, and (c) a step of subjecting the resist film on the substrate to exposure through an immersion liquid.
1. A pattern forming method comprising, in this order, (a) a step of forming a resist film on a substrate, (b) a pre-wet step of spreading a pre-wet solution on the resist film and after a time, removing the pre-wet solution, and (c) a step of exposing the resist film on the substrate to an ArF excimer laser having a wavelength of 193 nm as an exposure light source through an immersion liquid,
wherein the pre-wet step (b) is a step of spreading a pre-wet solution on the resist film and after a time, rotating the substrate to shake off and remove the pre-wet solution.
2. The pattern forming method according to claim 1 , wherein in the pre-wet step (b), the time after spreading the pre-wet solution on the resist film until removing the pre-wet solution is from 60 to 600 seconds.
3. The pattern forming method according to claim 1 , wherein in the pre-wet step (b), the time after spreading the pre-wet solution on the resist film until removing the pre-wet solution is from 120 to 480 seconds.
4. The pattern forming method according to claim 1 , wherein in the pre-wet step (b), the time after spreading the pre-wet solution on the resist film until removing the pre-wet solution is from 180 to 300 seconds.
5. The pattern forming method according to claim 1 , wherein in the pre-wet step (b), a rotation speed at the time of rotating the substrate to shake off and remove the pre-wet solution is from 100 to 2,000 rpm.
6. The pattern forming method according to claim 5 , wherein in the pre-wet step (b), the rotation speed at the time of rotating the substrate to shake off and remove the pre-wet solution is from 500 to 1,000 rpm.
7. The pattern forming method according to claim 1 , which further comprises (b′) a step of removing the pre-wet solution penetrated into the resist film after the pre-wet step (b).
8. The pattern forming method according to claim 7 , wherein the step (b′) of removing the pre-wet solution penetrated into the resist film is (b′1) a step of rotating the substrate to dry the resist film.
9. The pattern forming method according to claim 7 , wherein the step (b′) of removing the pre-wet solution penetrated into the resist film is (b′2) a step of heating the resist film on a hot plate at 40 to 150° C. to dry the resist film.
10. The pattern forming method according to claim 1 , wherein the pre-wet solution is water or a fluorine-based solvent.
11. The pattern forming method according to claim 1 , wherein the pre-wet solution is pure water.
12. The pattern forming method according to claim 1 , wherein the pre-wet solution is an immersion liquid.
13. A pattern forming method comprising, in this order, (a) a step of forming a resist film on a substrate, (b) a pre-wet step of spreading a pre-wet solution on the resist film and after a time, removing the pre-wet solution, and (c) a step of exposing the resist film on the substrate to an ArF excimer laser having a wavelength of 193 nm as an exposure light source through an immersion liquid,
wherein the pre-wet solution is pure water.