Semiconductor device and method for manufacturing semiconductor device
View Patent ↗To laminate field effect transistors having different conductivity types, while suppressing deterioration of the crystallinity of semiconductor layers where the field effect transistors are formed. A single crystal semiconductor layer, a dielectric layer and a single crystal semiconductor layer are successively laminated on a dielectric layer, a gate electrode is formed on side walls on both sides of the single crystal semiconductor layers through gate dielectric films and formed on side surfaces on both side of the single crystal semiconductor layers, source/drain layers disposed respectively on both sides of the gate electrode are formed in the single crystal semiconductor layer 13 a , and source/drain layers disposed respectively on both sides of the gate electrode are formed in the single crystal semiconductor layer, whereby a P-channel field effect transistor MP 1 and an N-channel field effect transistor MN 1 are laminated.
1. A method for manufacturing a semiconductor device, comprising:
forming an opening section comprising opposing surfaces forming a groove to expose side surfaces of first and second semiconductor layers;
thermally oxidizing the first and second semiconductor layer through the opening section, to thereby form a gate dielectric film on side walls of the first and second semiconductor layers;
forming a gate electrode that is embedded in the opening section through the gate dielectric film and extends across a surface of an uppermost layer of the semiconductor layers;
conducting an ion injection of P-type impurity from the surface side of the semiconductor layers using the gate electrode as a mask, to thereby form first source/drain layers disposed respectively on both sides of the gate electrode in the first semiconductor layer; and
conducting an ion injection of N-type impurity from the surface side of the semiconductor layer using the gate electrode as a mask, to thereby form second source/drain layers disposed respectively on both sides of the gate electrode in the second semiconductor layer.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein B ions are used for the ion injection of the P-type impurity, and Sb, As or P ions are used for the ion injection of the N-type impurity.
3. A method for manufacturing a semiconductor device according to claim 1 , comprising:
forming a first groove so as to mutually isolate a lower layer of the semiconductor layers;
forming a second groove that mutually isolate an upper layer of the semiconductor layers so as to expose a part of the lower layer of the semiconductor layers; and
embedding the first groove and the second groove with a dielectric.
4. A method for manufacturing a semiconductor device according to claim 1 , comprising:
exposing at least one of the surfaces and the side wall of the first source/drain layers formed in the first semiconductor layer;
forming a first contact layer that contacts at least one of the surfaces and the side wall of the first source/drain layers;
exposing at least one of the surface and the side wall of the second source/drain layers formed in the second semiconductor layer; and
forming a second contact layer that contacts at least one of the surfaces and the side wall of the second source/drain layers.
5. A method for manufacturing a semiconductor device, comprising:
depositing a dielectric film on first and second semiconductor layers;
forming an opening section in the dielectric film, said opening section comprising opposing surfaces forming a groove, thereby exposing side surfaces of the first and second semiconductor layers, a portion of the side surfaces becomes a channel region in an uppermost layer of said side surfaces;
thermally oxidizing the first and second semiconductor layer through the opening section, to thereby form a gate dielectric film on the side walls of the first and second semiconductor layers in the opening section and on the surface of the semiconductor layer in the uppermost layer;
conducting an ion injection of P-type impurity from the surface side of the semiconductor layer through the dielectric film with the opening section formed therein, to thereby form first source/drain layers disposed respectively on both sides of the channel region in the first semiconductor layer;
conducting an ion injection of N-type impurity from the surface side of the semiconductor layer through the dielectric film with the opening section formed therein, to thereby form second source/drain layers disposed respectively on both sides of the channel region in the second semiconductor layer; and
forming a gate electrode that is embedded in the opening section through the gate dielectric film.
6. A method for manufacturing a semiconductor device, comprising:
forming a first opening section comprising opposing surfaces forming a groove, said first opening section thereby exposing that exposes side surfaces of first and second semiconductor layers;
forming a second opening section that exposes a surface of the semiconductor layer in a lower layer;
thermally oxidizing the first and second semiconductor layers through the first and second opening sections, to thereby form a gate dielectric film on side walls of the first and second semiconductor layers in the first opening section and on a surface of the semiconductor layer in the second opening section;
removing the gate dielectric film formed on the surface of the semiconductor layer in the second opening section;
forming a gate electrode embedded in the first opening section through the gate dielectric film, and a first contact layer that is embedded in the second opening section and contacts the semiconductor layer in the lower layer;
conducting an ion injection of P-type impurity from the surface side of the semiconductor layer, to thereby form first source/drain layers disposed respectively on both sides of the gate electrode in the first semiconductor layer;
conducting an ion injection of N-type impurity from the surface side of the semiconductor layer, to thereby form second source/drain layers disposed respectively on both sides of the gate electrode in the second semiconductor layer; and
forming a second contact layer that contacts the semiconductor layer.