Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell
View Patent ↗The invention relates to an imaging device having a pixel cell with a transparent conductive material interconnect line for focusing incident light onto a photosensor and providing an electrical connection to pixel circuitry, and the method of making the same.
1. A pixel cell comprising:
a photosensor having a charge accumulation area;
pixel circuitry coupled to said photosensor for operating said pixel cell to produce at least one pixel output signal; and
a transparent conductive material interconnect line for focusing incident light onto said photosensor and providing an electrical connection to said circuitry.
2. The pixel cell of claim 1 , wherein said transparent conductive material is a semiconducting oxide of a material selected from the group consisting of tin, indium, zinc, and cadmium.
3. The pixel cell of claim 2 , wherein said transparent conductive material is selected from the group consisting of SnO 2 , In 2 O 3 , Cd 2 SnO 4 , ZnO, Zn 2 SnO 4 , ZnSnO 3 , Cd 2 SnO 4 , (Zn 2 SnO 4 ) 4 , (MgIn 2 O 4 ) 5 , (CdSb 2 O 6 : Y) 6 , (ZnSnO 3 ) 7 , (GaInO 3 ) 8 , (Zn 2 In 2 O 5 ) 9 , and (InSn 3 O 12 ) 10 , and indium-tin oxide.
4. The pixel cell of claim 1 , wherein said transparent conductive material is indium-tin-oxide.
5. The pixel cell of claim 1 , wherein said transparent conductive material interconnect line has a cross-sectional shape that is hemi-elliptical.
6. The pixel cell of claim 1 , wherein said transparent conductive material interconnect line has a top down shape that is selected from the group consisting of substantially circular, rectangular, and elliptical.
7. The pixel cell of claim 1 , wherein said transparent conductive material interconnect line couples said charge storage region to external circuitry.
8. The pixel cell of claim 7 , wherein said transparent conductive material interconnect line is connected to a gate associated with said charge storage region.
9. The pixel cell of claim 1 , wherein said transparent conductive material interconnect line is coupled to a source/drain region of a transistor, wherein a transistor gate of said transistor is capable of resetting said associated charge storage region.
10. The pixel cell of claim 9 , wherein said transparent conductive material interconnect line is capable of applying a voltage to said source/drain region of said transistor gate.
11. The pixel cell of claim 1 , wherein said transparent conductive material interconnect line couples said charge storage region to a transistor gate.
12. The pixel cell of claim 1 , wherein said transparent conductive material interconnect line is capable of applying a voltage to a transistor gate, said transistor gate gating the output of charge collected in said charge collection region.
13. A pixel cell comprising:
a photosensor having a charge accumulation area;
an associated charge storage region for storing charges accumulated by said photosensor;
pixel circuitry coupled to said photosensor and charge storage region for operating said pixel cell to produce at least one pixel output signal; and
a transparent conductive material interconnect line for focusing incident light onto said photosensor and providing an electrical connection to said circuitry.
14. An imager integrated circuit comprising:
an array of pixel cells formed in a semiconductor substrate, wherein each pixel cell of said array comprises:
a photosensor having at least one doped region,
an associated charge collection region electrically coupled to said photosensor for collecting charge from said photosensor,
a first transistor gate coupled to said charge collection region for converting said collected charges from said photosensor into pixel output signal, and
a second transistor gate for outputting said pixel output signal to a first transparent conductive material interconnect line, said first transparent conductive material interconnect line being capable of focusing incident light onto said photosensor and conducting said pixel output signal to readout circuitry.
15. The integrated circuit of claim 14 , fuirther comprising signal processing circuitry formed in said substrate and electrically connected to the array for receiving and processing pixel output signals representing an image acquired by the array and for providing output data representing said image.
16. The integrated circuit of claim 14 , wherein said transparent conductive material is a semiconducting oxide of a material selected from the group consisting of tin, indium, zinc, and cadmium.
17. The integrated circuit of claim 14 , wherein said transparent conductive material is selected from the group consisting of SnO 2 , In 2 O 3 , Cd 2 SnO 4 , ZnO, Zn 2 SnO 4 , ZnSnO 3 , Cd 2 SnO 4 , (Zn 2 SnO 4 ) 4 , (MgIn 2 O 4 ) 5 , (CdSb 2 O 6 : Y) 6 , (ZnSnO 3 ) 7 , (GaInO 3 ) 8 , (Zn 2 In 2 O 5 ) 9 , and (In 4 Sn 3 O 12 ) 10 , silicon nitride, and indium-tin oxide.
18. The integrated circuit of claim 14 , wherein said transparent conductive material is indium-tin-oxide.
19. The integrated circuit of claim 14 , further comprising a second transparent conductive material interconnect line coupled to a source/drain region of a third transistor gate, said third transistor gate being capable of resetting said associated charge collection region.
20. The integrated circuit of claim 19 , wherein said second transparent conductive material interconnect line is capable of focusing incident light onto said photosensor.
21. The integrated circuit of claim 19 , further comprising a row select line coupled to said second transistor gate, said row select line being capable of applying a voltage to said second transistor gate.
22. The integrated circuit of claim 21 , wherein said row select line is formed of a transparent conductive material and is capable of focusing incident light on said photosensor.