Voltage level conversion circuit
View Patent ↗A voltage level conversion circuit is provided with a level converter for converting a VDD 1 system input signal into a VDD 2 system signal, and a NOT circuit for inverting the level-converted input signal and outputting the inverted signal, and the outputs of VDD 1 system NOT circuits constituting the level converter are input to only high breakdown voltage transistors in the level converter while a signal having a logical voltage level corresponding to the low power supply voltage VDD 2 is input to low breakdown voltage transistors, and further, only the input signal level-converted by the level converter is input to the NOT circuit.
1. A voltage level conversion circuit for converting an input signal having a logical voltage level corresponding to a first power supply voltage into an output signal having a logical voltage level corresponding to a second power supply voltage that is lower than the first power supply voltage, said voltage level conversion circuit being for use with a circuit that is to be driven by the second power supply voltage, said voltage level conversion circuit comprising:
a first P channel MOS transistor, having the second power supply voltage as a breakdown voltage, and a first N channel MOS transistor, having the first power supply voltage as a breakdown voltage, connected in series between the second power supply voltage and a ground voltage;
a second P channel MOS transistor, having the second power supply voltage as a breakdown voltage, and a second N channel MOS transistor having the first power supply voltage as a breakdown voltage, connected in series between the second power supply voltage and the ground voltage;
a first connection node, between the first P channel MOS transistor and the first N channel MOS transistor, connected to a gate of the second P channel MOS transistor; and
a second connection node, between the second P channel MOS transistor and the second N channel MOS transistor, connected to a gate of the first P channel MOS transistor;
wherein said output signal is to be supplied via the second connection node to the circuit that is to be driven by the second power supply voltage;
the driving abilities of the first P channel MOS transistor and the second P channel MOS transistor are smaller than the driving abilities of the first N channel MOS transistor and the second N channel MOS transistor; and
the voltage level conversion circuit further comprising:
a first resistor connected between the first P channel MOS transistor and the first connection node; and
a second resistor connected between the second P channel MOS transistor and the second connection node.
2. A voltage level conversion circuit for converting an input signal having a logical voltage level corresponding to a first power supply voltage into an output signal having a logical voltage level corresponding to a second power supply voltage that is lower than the first power supply voltage, said voltage level conversion circuit being for use with a circuit that is to be driven by the second power supply voltage, said voltage level conversion circuit comprising:
a first P channel MOS transistor, having the second power supply voltage as a breakdown voltage, and a first N channel MOS transistor, having the first power supply voltage as a breakdown voltage, connected in series between the second power supply voltage and a ground voltage;
a second P channel MOS transistor, having the second power supply voltage as a breakdown voltage, and a second N channel MOS transistor having the first power supply voltage as a breakdown voltage, connected in series between the second power supply voltage and the ground voltage;
a first connection node, between the first P channel MOS transistor and the first N channel MOS transistor, connected to a gate of the second P channel MOS transistor;
a second connection node, between the second P channel MOS transistor and the second N channel MOS transistor, connected to a gate of the first P channel MOS transistor;
a fifth P channel MOS transistor connected between the first connection node and the second power supply voltage;
a sixth P channel MOS transistor connected between the second connection node and the second power supply voltage;
a first signal generation circuit for applying a one-shot pulse voltage for turning on the sixth P channel MOS transistor to a gate of the sixth P channel MOS transistor, when an L level logical voltage generated at the first connection node is detected; and
a second signal generation circuit for applying a one-shot pulse voltage for turning on the fifth P channel MOS transistor to a gate of the fifth P channel MOS transistor, when an L level logical voltage generated at the second connection node is detected;
wherein said output signal is to be supplied via the second connection node to the circuit that is to be driven by the second power supply voltage.
3. A voltage level conversion circuit as defined in claim 2 further comprising:
a first resistor connected between the first P channel MOS transistor and the first connection node; and
a second resistor connected between the second P channel MOS transistor and the second connection node.
4. A voltage level conversion circuit for converting an input signal having a logical voltage level corresponding to a first power supply voltage into an output signal having a logical voltage level corresponding to a second power supply voltage that is lower than the first power supply voltage, said voltage level conversion circuit being for use with a circuit that is to be driven by the second power supply voltage, said voltage level conversion circuit comprising:
a first P channel MOS transistor, having the second power supply voltage as a breakdown voltage, and a first N channel MOS transistor, having the first power supply voltage as a breakdown voltage, connected in series between the second power supply voltage and a ground voltage;
a second P channel MOS transistor, having the second power supply voltage as a breakdown voltage, and a second N channel MOS transistor having the first power supply voltage as a breakdown voltage, connected in series between the second power supply voltage and the ground voltage;
a first connection node, between the first P channel MOS transistor and the first N channel MOS transistor, connected to a gate of the second P channel MOS transistor; and
a second connection node, between the second P channel MOS transistor and the second N channel MOS transistor, connected to a gate of the first P channel MOS transistor;
wherein said output signal is to be supplied via the second connection node to the circuit that is to be driven by the second power supply voltage;
the driving abilities of the first P channel MOS transistor and the second P channel MOS transistor are smaller than the driving abilities of the first N channel MOS transistor and the second N channel MOS transistor; and
the voltage level conversion circuit further comprises:
a fifth P channel MOS transistor connected between the first connection node and the second power supply voltage;
a sixth P channel MOS transistor connected between the second connection node and the second power supply voltage;
a first signal generation circuit for applying a one-shot pulse voltage for turning on the sixth P channel MOS transistor to a gate of the sixth P channel MOS transistor, when an L level logical voltage generated at the first connection node is detected; and
a second signal generation circuit for applying a one-shot pulse voltage for turning on the fifth P channel MOS transistor to a gate of the fifth P channel MOS transistor, when an L level logical voltage generated at the second connection node is detected.
5. A voltage level conversion circuit as defined in claim 4 further comprising:
a first resistor connected between the first P channel MOS transistor and the first connection node; and
a second resistor connected between the second P channel MOS transistor and the second connection node.