Manufacturing method for SOI semiconductor device, and SOI semiconductor device
View Patent ↗A manufacturing method for an SOI semiconductor device includes creating transistors and an element isolation region on a semiconductor layer in an SOI substrate. The method also includes covering the transistors and the element isolation region with a first insulation film. The method also includes creating a first opening section which penetrates the first insulation film, element isolation region and a buried oxide film to expose the support substrate. The method also includes creating a first source interconnect, first drain interconnect and first gate interconnect which are electrically connected to the transistors, on the second insulation film. The method also includes forming dummy interconnects which are connected with these interconnects, and are electrically connected with the support substrate via the first opening section, on the second insulation film. The method also includes disconnecting the dummy interconnects to electrically insulate the first source interconnect, first drain interconnect and first gate interconnect from the support substrate.
1. An SOI semiconductor device, comprising:
an SOI substrate including a support substrate, a first insulation film and a semiconductor layer formed on the support substrate via the first insulation film;
at least one transistor and an element isolation region formed on the semiconductor layer;
a second insulation film covering the at least one transistor and the element isolation region;
a first opening section which penetrates the second insulation film, element isolation region and first insulation film;
a first source interconnect, a first drain interconnect and first gate interconnect which are formed on the second insulation film and are electrically connected to the at least one transistor; and
dummy interconnects which are electrically connected to the first source interconnect, first drain interconnect and first gate interconnect, and are disconnected after being created by being electrically connected to the support substrate via the first opening section.
2. The SOI semiconductor device according to claim 1 , further comprising:
a third insulation film which covers the first source interconnect, first drain interconnect and first gate interconnect; and
a second source interconnect, second drain interconnect and second gate interconnect which are electrically connected to the first source interconnect, first drain interconnect and first gate interconnect respectively, and are formed on the third insulation film.
3. The SOI semiconductor device according to claim 1 , wherein the first opening section includes two opening sections, and the dummy interconnects electrically connect the first source interconnect and first drain interconnect to the support substrate via the two opening sections of the first opening section respectively, and electrically connect the first gate interconnect to the support substrate via one of the two opening sections of the first opening section.
4. The SOI semiconductor device according to claim 1 , wherein the first opening section includes one opening section, and the dummy interconnects electrically connect the first source interconnect, first drain interconnect and gate interconnect to the support substrate via the one opening section.