Transistor having soluble layers
View Patent ↗A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor; and subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first material a second material from solution in a second solvent in which the first material is substantially insoluble.
1. A transistor comprising:
an insulator layer;
a gate electrode layer;
an isolation layer between the insulator layer and the gate electrode layer; and
a surface modification layer formed over said isolation layer.
2. The transistor as claimed in claim 1 , wherein the isolation layer comprises a polyfluorene derivative.
3. The transistor as claimed in claim 2 , wherein the polyfluorene derivative is F8T2 or TFB.
4. The transistor as claimed in claim 1 , wherein the material of the gate electrode layers is PEDOT/PSS.
5. The transistor as claimed in claim 1 , wherein the material of the insulator layers is PVP.
6. The transistor as claimed in claim 1 , wherein the transistor is optically transparent.
7. A transistor as claimed in claim 1 , wherein the insulator layer is a gate insulator layer comprising polyvinylphenol; and the gate electrode layer comprises polyethylenedioxythiophene/polystyrolsulfonate.
8. The transistor as claimed in claim 1 , wherein one of the insulator layer and the isolation layer comprises a polar polymer, and the other of the insulator layer and the isolation layer is a non-polar polymer.
9. The transistor as claimed in claim 1 , wherein one of the isolation layer and the gate electrode layer comprises a polar polymer and the other of the isolation layer and the gate electrode layer is a non-polar polymer.