Semiconductor device and method of producing the same
View Patent ↗In a semiconductor device having element isolation made of a trench-type isolating oxide film 13 , large and small dummy patterns 11 of two types, being an active region of a dummy, are located in an isolating region 10 , the large dummy patterns 11 b are arranged at a position apart from actual patterns 9 , and the small dummy patterns 11 a are regularly arranged in a gap at around a periphery of the actual patterns 9 , whereby uniformity of an abrading rate is improved at a time of abrading an isolating oxide film 13 a is improved, and surface flatness of the semiconductor device becomes preferable.
1. A semiconductor device comprising:
a semiconductor substrate;
an active device region formed on a principal surface of the semiconductor substrate;
an isolating region surrounding the active device region;
a plurality of first dummy patterns arranged regularly in rows and columns at a first pitch in the isolating region; and
a plurality of second dummy patterns arranged regularly in rows and columns at a second pitch in the isolating region,
wherein the second pitch is larger than the first pitch, and
wherein each of the second dummy patterns has a larger area than each of the first dummy patterns.
2. The semiconductor device according to claim 1 , the isolating region is made of an oxide film buried in a ditch formed on the principal surface of the semiconductor substrate.
3. The semiconductor device according to claim 2 , each of the first dummy patterns and each of the second dummy patterns are surrounded with the oxide film.
4. The semiconductor device according to claim 1 , the active device region is arranged in the vicinity of the first dummy patterns rather than the second dummy patterns.
5. A semiconductor device comprising:
a semiconductor substrate;
two active device regions formed on a principal surface of the semiconductor substrate;
an isolating region formed between two active device regions;
a plurality of first dummy patterns arranged regularly in rows and columns at a first pitch in the isolating region; and
a plurality of second dummy patterns arranged regularly in rows and columns at a second pitch in the isolating region;
wherein the second pitch is larger than the first pitch, and
wherein each of the second dummy patterns has a larger area than each of the first dummy patterns.
6. The semiconductor device according to claim 5 , the isolating region is made of an oxide film buried in a ditch formed on the principal surface of the semiconductor substrate.
7. The semiconductor device according to claim 6 ,
wherein each of the first dummy patterns and each of the second dummy patterns are surrounded with the oxide film.