Perpendicular magnetic recording disk with improved recording layer having high oxygen content
View Patent ↗A perpendicular magnetic recording disk has an improved recording layer of a granular CoPtCr-based ferromagnetic alloy with inter-granular material made up of one or more oxides of Cr and one or more oxides of one or more of a segregant of Si, Ta, Ti, B, Nb or Hf, wherein the amount of oxygen present in the recording layer is greater than about 22 atomic percent and less than about 35 atomic percent. The amount of oxygen in the recording layer is substantially greater than the amount required for the stoichiometric oxide or oxides of the segregant or segregants, and a substantial portion of the oxygen present in the recording layer is present in the inter-granular material. The recording layer exhibits high signal-to-noise ratio (SNR), a coercivity H c greater than about 5000 Oe and a nucleation field H n greater (more negative) than about −1500 Oe.
1. A perpendicular magnetic recording disk comprising:
a substrate;
a layer of magnetically permeable material on the substrate;
a nonmagnetic underlayer on the layer of magnetically permeable material and having a hexagonal-close-packed (hcp) crystalline structure; and
a granular magnetic recording layer on the underlayer and having a hcp crystalline structure with the c-axis oriented substantially perpendicular to the recording layer, the recording layer comprising Co, Pt, Cr, and oxides consisting of oxides of Cr and Ta, said Cr oxides and Ta oxides being present primarily between the grains of the granular magnetic recording layer, wherein the amount of oxygen present in the recording layer is greater than about 22 atomic percent and less than about 35 atomic percent and the amount of Ta present in the recording layer is greater than about 2 atomic percent and less than about 5 atomic percent, the recording layer having a coercivity H c greater than about 6000 Oe and a nucleation field H n more negative than about −2000 Oe.
2. The disk of claim 1 wherein more than about 70 percent of the oxygen present in the recording layer is present between the grains.
3. A perpendicular magnetic recording system comprising:
the disk of claim 1 ;
a write head for magnetizing regions in the recording layer of said disk; and
a read head for detecting the transitions between said magnetized regions.
4. A method for reactively sputter depositing a granular magnetic recording layer of a perpendicular magnetic recording disk, the disk comprising a substrate; a layer of magnetically permeable material on the substrate; a nonmagnetic underlayer on the layer of magnetically permeable material and having a hexagonal-close-packed (hcp) crystalline structure; and a granular magnetic recording layer on the underlayer and having a hcp crystalline structure with the c-axis oriented substantially perpendicular to the recording layer, the recording layer comprising Co, Pt, Cr, and oxides consisting of oxides of Cr and Ta, said Cr oxides and said Ta oxides being present primarily between the grains of the granular magnetic recording layer, wherein the amount of oxygen present in the recording layer is greater than about 22 atomic percent and less than about 35 atomic percent and the amount of Ta present in the recording layer is greater than about 2 atomic percent and less than about 5 atomic percent, the recording layer having a coercivity H c greater than about 6000 Oe and a nucleation field H n more negative than about −2000 Oe, the method comprising:
providing a sputtering chamber;
providing in the chamber an oxide sputtering target consisting essentially of only Ta 2 O 5 ;
providing in the chamber one or more sputtering targets consisting essentially of only Co, Pt and Cr;
applying power to all of said sputtering targets; and
introducing an argon/oxygen gas mixture into said chamber while controlling the partial pressure of oxygen in said chamber within a predetermined range to thereby reactively sputter deposit said recording layer having said values of coercivity and nucleation field.
5. The method of claim 4 wherein controlling the partial pressure of oxygen in said chamber within a predetermined range comprises controlling the partial pressure of oxygen in said chamber to be between about 1.5 and 2.5 percent.