Angled implant for shorter trench emitter

1. A semiconductor device comprising:

a semiconductive body having a first major surface and a second major surface opposing said first major surface;

a plurality of trenches extending from a top portion of said first major surface to a predetermined depth, each said trench having two opposing vertical walls and a bottom portion, and each said trench being lined by an insulation layer and filled with a conductive material;

a plurality of L-shaped emitter regions of a first conductivity, each emitter region disposed at a vertical wall of a trench and including a vertically oriented portion extending from a top of said first major surface to a predetermined depth and a horizontally oriented portion extending laterally from an upper edge thereof, said vertically oriented portion and said horizontally oriented portion of each L-shaped emitter region having a depth and a conductivity, said depth and said conductivity of said vertically oriented portion being configured independently of said depth and said conductivity of said horizontally oriented portion;

a collector region of said first conductivity;

a channel region of a second conductivity disposed between said emitter regions and said collector region;

a high conductivity region of said second conductivity formed in said channel region at the bottom of a recess, said recess including at least two opposing sidewalls, each sidewall coinciding with a respective horizontal portion of a respective L-shaped emitter region; and

an emitter contact electrically connected to said high conductivity region and said sidewalls of said recess.

2. A semiconductor device according to claim 1 , further comprising a collector contact.

3. A semiconductor device according to claim 1 , wherein said conductive material comprises polysilicon.

4. A semiconductor device according to claim 1 , wherein said insulation layer comprises an oxide.

5. A semiconductor device according to claim 4 , wherein said oxide is silicon dioxide.

6. A semiconductor device comprising:

a semiconductive body having a first major surface and a second major surface opposing said first major surface;

a plurality of trenches extending from a top portion of said first major surface to a predetermined depth, each said trench having two opposing vertical walls and a bottom portion, and each said trench being lined by an insulation layer and filled with a conductive material;

a recess formed in said semiconductive body between said plurality of trenches;

a plurality of L-shaped first diffused regions, each first diffused region disposed at a vertical wall of a trench and including a vertically oriented portion extending from a top of said first major surface to a predetermined depth and a horizontally oriented portion extending laterally from an upper edge thereof and terminating at a respective sidewall of said recess, said vertically oriented portion and said horizontally oriented portion of each L-shaped first diffused region having a depth and a conductivity, said depth and said conductivity of said vertically oriented portion being configured independently of said depth and said conductivity of said horizontally oriented portion;

a drift region of said first conductivity;

a channel region of a second conductivity disposed between said first diffused regions and said drift region;

a high conductivity region of said second conductivity formed in said channel region at the bottom of said recess, and a first electrical contact in electrical contact with said high conductivity region and said horizontal portions at said sidewalls of said recess.

7. A semiconductor device according to claim 6 , further comprising a second contact in electrical contact with said second diffused region.

8. A semiconductor device according to claim 6 , wherein said conductive material comprises polysilicon.

9. A semiconductor device according to claim 6 , wherein said insulation layer comprises an oxide.

10. A semiconductor device according to claim 9 , wherein said oxide is silicon dioxide.