Liquid crystal display device and fabricating method thereof

1. A liquid crystal display device, comprising:

first and second substrates facing each other;

a liquid crystal material between the first and second substrates;

gate and data lines crossing each other on the first substrate to define a pixel region;

a thin film transistor adjacent to the crossing of the gate and data lines;

a color filter pattern in the pixel region;

a first passivation layer on the color filter pattern, the first passivation layer made of an inorganic insulating material; and

a pixel electrode on the first passivation layer and electrically connected to the thin film transistor.

2. The device according to claim 1 , further comprising a black matrix on the thin film transistor.

3. The device according to claim 2 , wherein the black matrix covers the thin film transistor and the data line.

4. The device according to claim 3 , wherein the black matrix overlaps the gate line.

5. The device according to claim 1 , further comprising a storage electrode overlapping the gate line and contacting the pixel electrode.

6. The device according to claim 5 , further comprising a connection line connecting the thin film transistor and the storage electrode.

7. The device according to claim 6 , wherein the thin film transistor includes a gate electrode, a first semiconductor pattern, and source and drain electrodes.

8. The device according to claim 7 , further comprising a second semiconductor pattern disposed below the data line and extending along the data line.

9. The device according to claim 5 , further comprising a second passivation layer between the storage electrode and the color filter pattern.

10. The device according to claim 9 , wherein the first passivation layer, the color filter pattern and the second passivation layer have a contact hole.

11. The device according to claim 10 , wherein the contact hole exposes at least a portion of the storage electrode.

12. A method of fabricating a liquid crystal display device, comprising:

forming gate and data lines crossing each other on a first substrate to define a pixel region;

forming a thin film transistor adjacent to the crossing of the gate and data lines;

forming a color filter pattern in the pixel region;

forming a passivation layer on the color filter pattern, the passivation layer be made of an inorganic insulating material;

forming a pixel electrode on the passivation layer and electrically connected to the thin film transistor;

attaching the first substrate and a second substrates; and

injecting a liquid crystal material between the first and second substrates.

13. The method according to claim 12 , further comprising forming a black matrix on the thin film transistor.

14. The method according to claim 13 , further comprising forming the black matrix covers the thin film transistor and the data line.

15. The method according to claim 14 , further comprising forming the black matrix to overlap the gate line.

16. The method according to claim 12 , further comprising forming a storage electrode overlapping the gate line and contacting the pixel electrode.

17. The method according to claim 16 , further comprising forming a connection line connecting the thin film transistor and the storage electrode.

18. The method according to claim 17 , wherein forming the thin film transistor includes forming a gate electrode, a first semiconductor pattern, and source and drain electrodes.

19. The method according to claim 18 , further comprising forming a second semiconductor pattern below the data line and extending along the data line.

20. The method according to claim 16 , further comprising forming another passivation layer between the storage electrode and the color filter pattern.

21. The method according to claim 20 , further comprising a contact hole in the passivation layer and the color filter pattern and the another passivation layer.

22. The method according to claim 21 , wherein the, contact hole exposes at least a portion of the storage electrode.