Nonvolatile semiconductor memory
View Patent ↗Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.
1. A nonvolatile memory formed on one semiconductor chip, comprising:
a plurality of nonvolatile memory cells, each of which is capable of erasing data by Fowler-Nordheim (FN)-tunnel phenomenon and is capable of storing data by FN-tunnel phenomenon; and
a plurality of terminals including an address terminal used for inputting an address information for selecting first nonvolatile memory cells of said plurality of nonvolatile memory cells, a serial clock terminal used for inputting clock pulses, and a data terminal used for inputting data for storing into said first nonvolatile memory cells in response to said clock pulses,
wherein said nonvolatile memory is adapted to receiving data for storing into said first nonvolatile memory cells after receiving said address information,
wherein said nonvolatile memory is capable of performing a program operation for storing 512 byte data to said first nonvolatile memory cells, and
wherein said nonvolatile memory is capable of performing an erase operation for erasing data stored in said first nonvolatile memory cells.
2. A nonvolatile memory according to claim 1 , further comprising a power circuit,
wherein said power circuit generates a program voltage for supplying to said first nonvolatile memory in performing said program operation, and
wherein said power circuit generates an erase voltage for supplying to said first nonvolatile memory in performing said erase operation.
3. A nonvolatile memory according to claim 2 , further comprising a control circuit,
wherein said control circuit is adapted to control either one of said program operation and said erase operation.
4. A nonvolatile memory according to claim 3 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
5. A nonvolatile memory according to claim 2 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
6. A nonvolatile memory according to claim 1 , further comprising a control circuit,
wherein said control circuit is adapted to control either one of said program operation and said erase operation.
7. A nonvolatile memory according to claim 6 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
8. A nonvolatile memory according to claim 1 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
9. A nonvolatile memory formed on one semiconductor chip, comprising:
a plurality of nonvolatile memory cells, each of which is capable of erasing data by Fowler-Nordheim(FN)-tunnel phenomenon and is capable of storing data by FN-tunnel phenomenon; and
a plurality of terminals including an address terminal used for inputting an address information to an address buffer, a serial clock terminal used for inputting clock pulses, and a data terminal used for inputting data for storing into said first nonvolatile memory cells of said plurality of nonvolatile memory cells,
wherein said nonvolatile memory is adapted to receiving data for storing into said first nonvolatile memory cells after receiving said address information,
wherein said nonvolatile memory is capable of performing a program operation for storing 512 byte data to said first nonvolatile memory cells, and
wherein said nonvolatile memory is capable of performing an erase operation for erasing data stored in said first nonvolatile memory cells.
10. A nonvolatile memory according to claim 9 , further comprising a power circuit,
wherein said power circuit generates a program voltage for supplying to said first nonvolatile memory in performing said program operation, and
wherein said power circuit generates an erase voltage for supplying to said first nonvolatile memory in performing said erase operation.
11. A nonvolatile memory according to claim 10 , further comprising a control circuit,
wherein said control circuit is adapted to control either one of said program operation and said erase operation.
12. A nonvolatile memory according to claim 11 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
13. A nonvolatile memory according to claim 10 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
14. A nonvolatile memory according to claim 9 , further comprising a control circuit,
wherein said control circuit is adapted to control either one of said program operation and said erase operation.
15. A nonvolatile memory according to claim 14 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.
16. A nonvolatile memory according to claim 9 , further comprising a data buffer,
wherein said data buffer is capable of temporarily storing data received from said data terminal.