Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
View Patent ↗An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.
1. An optical modulator, comprising:
a first waveguide layer and a barrier layer; and
a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.
2. The optical modulator of claim 1 , in which the material of the quantum well layer includes the same elements as the material of the first waveguide layer and the barrier layer.
3. The optical modulator of claim 2 , in which the fraction of at least one element is graded across the quantum well layer, the fraction of the at least one element increasing toward the barrier layer, and a fraction of at least one other element is graded across the quantum well layer, the fraction of the at least one other element decreasing toward the barrier layer.
4. The optical modulator of claim 2 , in which the fraction of at least one element is graded across the quantum well layer, the fraction of the at least one element decreasing toward the barrier layer, and a fraction of at least one other element is graded across the quantum well layer, the fraction of the at least one other element increasing toward the barrier layer.
5. The optical modulator of claim 2 , in which the first waveguide layer comprises indium phosphide (InP) and the quantum well layer comprises indium gallium arsenide phosphide (InGaAsP).
6. The optical modulator of claim 5 , in which the quantum well layer comprises indium gallium arsenide phosphide (In x Ga 1−x As y P 1−y ), where 0≦x≦1 and 0≦y≦1.
7. The optical modulator of claim 6 , in which, when a reverse electrical bias is applied across the quantum well layer, the distribution of conduction-band electrons substantially aligns with the distribution of valence-band holes in the quantum well layer.
8. The optical modulator of claim 7 , in which the quantum well layer has a progressive composition that ranges between In 0.61 Ga 0.39 As 0.84 P 0.16 and In 0.85 Ga 0.15 As 0.33 P 0.67 .
9. The optical modulator of claim 1 , wherein the quantum well layer further comprises:
a graded-composition layer and a fixed-composition layer, the graded-composition layer sandwiched between the first waveguide layer and the fixed-composition layer, the graded-composition layer having a bandgap energy between the bandgap energies of the first waveguide layer and the fixed-composition layer.
10. The optical modulator of claim 9 , in which the material of the graded-composition layer includes the same elements as the material of the first waveguide layer and the fixed-composition layer.
11. The optical modulator of claim 10 , in which the fraction of at least one element is graded across the graded-composition layer, the fraction of the at least one element increasing toward the barrier layer, and a fraction of at least one other element is graded across the graded-composition layer, the fraction of the at least one other element decreasing toward the barrier layer.
12. The optical modulator of claim 10 , in which the fraction of at least one element is graded across the graded-composition layer, the fraction of the at least one element decreasing toward the barrier layer, and a fraction of at least one other element is graded across the graded-composition layer, the fraction of the at least one other element increasing toward the barrier layer.
13. The optical modulator of claim 10 , in which the first waveguide layer, the barrier layer and the fixed-composition layer comprise indium phosphide (InP) and the graded-composition layer comprises indium gallium arsenide phosphide (InGaAsP).
14. The optical modulator of claim 13 , in which the graded-composition layer comprises indium gallium arsenide phosphide (In x Ga 1−x As y P 1−y ), where 0≦x≦1 and 0≦y≦1.
15. The optical modulator of claim 14 , in which, when a reverse electrical bias is applied across the quantum well layer, the distribution of conduction-band electrons substantially aligns with the distribution of valence-band holes in the quantum well layer.
16. The optical modulator of claim 15 , in which the graded-composition layer has a progressive composition that ranges between In 0.70 Ga 0.30 As 0.70 P 0.30 and In 0.85 Ga 0.15 As 0.33 P 0.67 .
17. The optical modulator of claim 15 , in which the graded-composition layer varies the bandgap energy of the quantum well layer between the bandgap energy at the interface of the fixed-composition layer and the graded-composition layer and the bandgap energy of at least one of the first waveguide layer and the barrier layer.
18. A method of modulating light, comprising:
providing a quantum well structure having at least one element that forms a graded composition within the quantum well structure, the graded composition varying the bandgap energy of the quantum well structure;
directing light onto the quantum well structure;
converting the light into electron-hole pairs; and
extracting the electron-hole pairs from the quantum well to generate a photocurrent.
19. The method of claim 18 , further comprising grading the composition of a quantum well layer in the quantum well structure to vary the bandgap energy of the quantum well layer between the bandgap energy of the layers adjoining the quantum well layer.
20. The method of claim 18 , further comprising:
providing an additional material layer in the quantum well structure; and
grading the composition of the additional material layer to vary the bandgap energy of the additional material layer between the bandgap energy of the quantum well layer and a waveguide layer adjacent the additional material layer.
21. The method of claim 18 , further comprising applying a reverse electrical bias across the quantum well structure so the distribution of conduction-band electrons substantially aligns with the distribution of valence-band holes in the quantum well structure.
22. An optical modulator, comprising:
a first waveguide layer and a barrier layer; and
a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer with increasing distance from the first waveguide layer.