Liquid crystal display device and fabricating method thereof
View Patent ↗A liquid crystal display device is provided that includes: first and second substrates; a gate line of a double layer having a first transparent conductive layer and a second opaque conductive layer on the first substrate; a first insulation film on the gate line; a data line crossing the gate line to define a pixel region, the pixel region having a transmissive area and a reflective area; a thin film transistor connected to the gate and data lines; a pixel electrode having the first conductive layer in the pixel region and a second conductive layer along the boundary of the first conductive layer; a storage upper electrode to form a storage capacitor by overlapping with the gate line the first insulation film there between; a transmission hole to expose the side of the storage upper electrode and a drain electrode of the thin film transistor by passing through the first insulation film and a second insulation film on the thin film transistor; a reflective electrode connected the second conductive layer of the pixel electrode with the drain electrode and the storage upper electrode through an edge portion of the transmission hole; and a liquid crystal layer between the first and second substrates.
1. A liquid crystal display device, comprising:
first and second substrates;
a gate line having a double layer including a first transparent conductive layer and a second opaque conductive layer on the first substrate;
a first insulation film on the gate line;
a data line crossing the gate line to define a pixel region, the pixel region having a transmissive area and a reflective area;
a thin film transistor connected to the gate and data lines;
a pixel electrode having the first conductive layer in the pixel region and the second conductive layer along a boundary of the first conductive layer;
a storage upper electrode forming a storage capacitor by overlapping the gate line with the first insulation film there between;
a transmission hole formed in the transmissive area and exposing a side of the storage upper electrode and a side of a drain electrode of the thin film transistor by passing through the first insulation film and a second insulation film on the thin film transistor;
a reflective electrode directly connected to the second conductive layer of the pixel electrode, the drain electrode and the storage upper electrode at an edge portion of the transmission hole, respectively; and
a liquid crystal layer between the first and second substrates.
2. The device of claim 1 , further comprising:
a gate pad extending from the first conductive layer of the gate line; and
a data pad formed of the first conductive layer of the gate pad.
3. The device of claim 2 , wherein the first and second insulation films are removed in the pad region.
4. The device of claim 2 , further comprising:
a data link extending from the data pad and overlapping an end part of the data line;
a first contact hole exposing the data link by passing through the first insulating film from the second insulation film via the data line; and
a contact electrode laterally connected to the data line through the first contact hole and surface-connected to the data link.
5. The device of claim 4 , wherein a first portion of the data link is formed of the first and second conductive layers, and a second portion of the data link is formed of the first conductive layer as the data pad.
6. The device of claim 5 , wherein the first portion overlaps with the second insulation film.
7. The device of claim 5 , wherein the second portion does not overlap the second insulation film.
8. The device of claim 4 , wherein the contact electrode is formed of the same metal as the reflective electrode.
9. The device of claim 1 , wherein the second insulation film is formed of an organic material.
10. The device of claim 1 , further comprising:
a third insulation film formed between the thin film transistor and the second insulation film.
11. The device of claim 10 , wherein the third insulation film is an inorganic material.
12. The device of claim 10 , wherein the transmission hole passes through the third insulation film.
13. The device of claim 1 , further comprising:
an electrostatic discharging device connected to one of the data line and the gate line.
14. The device of claim 13 , wherein the electrostatic discharging device comprises:
a second thin film transistor connected to one of the data line and the gate line;
a third thin film transistor connected between a gate electrode and a source electrode of the second thin film transistor in a diode form;
a fourth thin film transistor connected between the gate electrode and the drain electrode of the second thin film transistor in a diode form;
a second contact electrode connecting a source electrode and a gate electrode of the third thin film transistor through a second contact hole;
a third contact electrode connecting a drain electrode of the third or fourth thin film transistor and the gate electrode of the second thin film transistor through a third contact hole; and
a fourth contact electrode connecting a source electrode and a gate electrode of the fourth thin film transistor through a fourth contact hole.
15. The device of claim 14 , wherein the second, third and fourth contact electrodes are formed of the same metal layer as the reflective electrode.
16. The device of claim 14 , wherein the second and third contact holes expose a corresponding gate electrode by passing through the second insulation film to the gate insulating film via a source or drain electrode.
17. The device of claim 14 , wherein the first to fourth contact electrodes are formed in a sealant area.
18. The device of claim 1 , wherein the reflective electrode has an embossed surface.
19. The device of claim 18 , wherein the second insulation film has an embossed surface.
20. The device of claim 1 , further comprising a third conductive layer on the second conductive layer of the pixel electrode, a gate electrode of the thin film transistor, and the gate line.
21. A liquid crystal display device, comprising:
first and second substrates;
a gate line having a double layer structure including a first transparent conductive layer and a second opaque conductive layer;
a first insulation film on the gate line;
a data line crossing the gate line to define a pixel region, the pixel region having a transmissive area and a reflective area;
a thin film transistor connected to the gate and data lines;
a pixel electrode having the first conductive layer and the second conductive layer along the boundary of the first conductive layer;
a storage line having a double layer and a storage lower electrode integrated with the storage line;
a storage upper electrode integrated with a drain electrode of the thin film transistor and overlapping the storage lower electrode with the first insulation film there between to form a storage capacitor;
a transmission hole formed in the transmissive area and exposing a side surface of the storage upper electrode by passing through the first insulation film from a second insulation film on the thin film transistor;
a reflective electrode directly connected to the second conductive layer of the pixel electrode, the drain electrode and the storage upper electrode at an edge portion of the transmission hole, respectively; and
a liquid crystal layer between the first and second substrates.
22. The device of claim 21 , wherein the storage line crosses the data line.
23. The device of claim 21 , further comprising:
a gate pad extending from the first conductive layer of the gate line; and
a data pad formed of the first conductive layer of the gate pad.
24. The device of claim 23 , wherein the first and second insulation films are removed in the pad region.
25. The device of claim 23 , further comprising:
a data link extending from the data pad and overlapping an end part of the data line;
a first contact hole exposing the data line by passing through the first insulation film from the second insulation film via the data line; and
a contact electrode laterally connected to the data line through the first contact hole and surface-connected to the data link.
26. The device of claim 25 , wherein a first portion of the data link is formed of the first and second conductive layers, and a second portion of the data link is formed of the first conductive layer as the data pad.
27. The device of claim 26 , wherein the first portion overlaps the second insulation film.
28. The device of claim 26 , wherein the second portion does not overlap with the second insulation film.
29. The device of claim 23 , wherein the contact electrode is formed of the same metal as the reflective electrode.
30. The device of claim 21 , further comprising:
a third insulation film formed between the thin film transistor and the second insulation film.
31. The device of claim 30 , wherein the third insulation film is an inorganic material.
32. The device of claim 30 , wherein the transmission hole passes through the third insulation film.
33. The device of claim 21 , wherein the reflective electrode has an embossed surface.
34. The device of claim 33 , wherein the second insulation film has an embossed surface.
35. The device of claim 21 , further comprising:
a third conductive layer on the second conductive layer of the pixel electrode, a gate electrode of the thin film transistor and the gate line.