Color light receiving device and image pickup device
View Patent ↗The invention provides a light receiving device having a single semiconductor substrate and a short-wavelength light receiving section. The single semiconductor substrate has regions of a first conductivity type and regions of a second (opposite) conductivity type alternately multiply laminated. Each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength bands converted by other junction surfaces, to electricity. The short-wavelength light receiving section is provided on or above the incident light surface of the semiconductor substrate and detects light having a wavelength shorter than the central wavelengths of all the respective wavelength bands converted by the junction surfaces. The invention further provides an image pickup device which uses an array of a plurality of the light receiving device.
1. A light receiving device comprising a semiconductor substrate and a short-wavelength light receiving section provided on or above a surface of a light entering side of the semiconductor substrate, wherein:
the semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply laminated manner, wherein the second conductivity type is a conductivity type opposite to the first conductivity type;
each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength band(s) converted by other junction surfaces, to electricity; and
the short-wavelength light receiving section is separated from the semiconductor substrate by at least an insulating layer and detects light having a wavelength shorter than the central wavelength(s) of all the respective wavelength bands converted by the junction surfaces.
2. The light receiving device of claim 1 , wherein the semiconductor substrate and the short-wavelength light receiving section are spaced apart from each other.
3. The light receiving device of claim 1 , wherein a junction surface which has a light receiving section which mainly receives green color light resides nearer to the light entering side of the semiconductor substrate than a junction surface which has a light receiving section which mainly receives red color light.
4. The light receiving device of claim 1 , wherein the semiconductor substrate is a p-type silicon substrate, and has a structure selected from the group consisting of an npn junction and a pnpn junction, in which the p-n order is listed from the light entering side of the silicon substrate.
5. The light receiving device of claim 1 , wherein the short-wavelength light receiving section is made of an inorganic semiconductor, and the band gap is in a range of 420 to 480 nm.
6. The light receiving device of claim 5 , wherein the short-wavelength light receiving section is made of an InGaN-based, InAlN-based, InAlP-based, or InGaAlP-based inorganic semiconductor.
7. The light receiving device of claim 1 , wherein a quantum efficiency curve for the short-wavelength light receiving section has a maximum value in a frequency range of 420 to 480 nm.
8. The light receiving device of claim 1 , wherein the short-wavelength light receiving section is embedded in a semiconductor having a band gap wavelength which is equivalent to or shorter than a band gap wavelength of the short-wavelength light receiving section.
9. The light receiving device of claim 4 , wherein the short-wavelength light receiving section is made of an InGaN-based, or InAlN-based, inorganic semiconductor formed on a GaN layer.
10. The light receiving device of claim 9 , wherein the short-wavelength light receiving section is embedded in a GaN embedding layer which is formed around the light receiving section.
11. The light receiving device of claim 4 , wherein the short-wavelength light receiving section is made of an InAlP-based, or InGaAlP-based, inorganic semiconductor formed on a GaAs layer.
12. The light receiving device of claim 11 , wherein the short-wavelength light receiving section is embedded in an InAlP embedding layer which is formed around the light receiving section.
13. An image pickup device in which a plurality of light receiving devices are arranged, wherein the light receiving device comprise a semiconductor substrate and a short-wavelength light receiving section provided on or above a surface of a light entering side of the semiconductor substrate, wherein:
the semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an altemately multiply laminated manner, wherein the second conductivity type is a conductivity type opposite to the first conductivity type;
each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength band(s) converted by other junction surfaces, to electricity; and
the shortwavelength light receiving section is separated from the semiconductor device by at least an insulating layer and detects light having a wavelength shorter than the central wavelength(s) of all the respective wavelength band(s) converted by the junction surfaces.
14. The image pickup device of claim 13 , which is used as a CMOS image sensor.