Method of manufacturing nonvolatile semiconductor memory device

1. A method of manufacturing a nonvolatile semiconductor memory device, comprising the steps of:

forming a gate insulating film on a semiconductor substrate;

forming a first gate electrode film on a top of the gate insulating film and

forming an insulating film on a top of the first gate electrode film;

selectively patterning the gate insulating film, the first gate electrode film and the insulating film to form a first gate section;

forming a first insulating film on one side of the gate section and on the surface of the semiconductor substrate proximate the one side;

selectively patterning a stack film to form a second gate section, the stack film being fabricated by forming a silicon nitride film on a top of the first insulating film, oxidizing a surface portion of the silicon nitride film so as to form a second insulating film having a thickness of at least 4 nm, and further forming a second gate electrode film on a top of the second insulating film; and

forming a first impurity introducing layer on one side of the first gate section within the semiconductor substrate and forming a second impurity introducing layer on one side of the second gate section, by selectively introducing impurities by use of the first gate section and the second gate section as masks for the impurity introduction,

wherein the second insulating film is a film formed by oxidizing the surface of the silicon nitride film with radical oxygen in absence of hydrogen with a thermal process,

wherein the radical oxygen is generated from ozone being 20% or more in concentration, and

wherein arrival time of the ozone from an ozone inlet to an area above the substrate is shorter than time for thermal decomposition of the ozone.

2. A method of manufacturing a nonvolatile semiconductor memory device according to claim 1 , wherein ozone oxidation using the ozone is carried out using a combination of process conditions satisfying L/U<2×10 −3 [s] where a distance from an ozone inlet to a wafer is set to L [m] and an ozone gas flow rate is set to U [m/s].

3. A method of manufacturing a nonvolatile semiconductor memory device according to claim 1 , wherein the ozone is from 133 Pa to 20 kPa in partial pressure.

4. A method of manufacturing a nonvolatile semiconductor memory device according to claim 2 , wherein the ozone is from 133 Pa to 1.33 kPa in partial pressure.

5. A method of manufacturing a nonvolatile semiconductor memory device according to claim 1 , further comprising the step of forming a logic transistor on the semiconductor substrate.

6. A method of manufacturing a nonvolatile semiconductor memory device according to claim 1 , further comprising the concentrated ozone gas formation steps of:

preparing a mixture gas of ozone and oxygen;

cooling the mixture gas; and

evacuating only the oxygen so as to increase the ozone concentration of the mixture gas before supplying concentrated ozone gas to a gas line which leads the concentrated ozone gas to a process chamber.

7. A method of manufacturing a semiconductor memory device, comprising the steps of:

forming a gate insulating film on a semiconductor substrate;

forming a first gate electrode film on a top of the gate insulating film and

forming a first insulating film on a top of the first gate electrode film;

selectively patterning a stack film to form a gate section, the stack film being fabricated by forming a silicon nitride film on a top of the first insulating film, oxidizing a surface portion of the silicon nitride film so as to form a second insulating film having a thickness of at least 4 nm, and further forming a second gate electrode film on a top of the second insulating film; and

forming a first impurity introducing layer on one side of the gate section within the semiconductor substrate and forming a second impurity introducing layer on the other side, by selectively introducing impurities by use of the gate section as a mask of the impurity introduction,

wherein the second insulating film is a film formed by oxidizing the surface of the silicon nitride film with radical oxygen in absence of hydrogen with a thermal process, and

wherein the radical oxygen is generated from ozone being 20% or more in concentration, and

wherein arrival time of the ozone from an ozone inlet to an area above the substrate is shorter than time for thermal decomposition of the ozone.

8. A method of manufacturing a nonvolatile semiconductor memory device according to claim 7 , wherein ozone oxidation using the ozone is carried out using a combination of process conditions satisfying L/U<2×10 −3 [s] where a distance from an ozone inlet to a wafer is set to L [m] and an ozone gas flow rate is set to U [m/s].

9. A method of manufacturing a nonvolatile semiconductor memory device according to claim 7 , wherein the ozone is from 133 Pa to 20 kPa in partial pressure.

10. A method of manufacturing a nonvolatile semiconductor memory device according to claim 8 , wherein the ozone is from 133 Pa to 1.33 kPa in partial pressure.

11. A method of manufacturing a nonvolatile semiconductor memory device according to claim 7 , wherein the silicon nitride film and the second insulating film constitute a portion of an interlayer film present between the first gate electrode film and the second gate electrode film.

12. A method of manufacturing a nonvolatile semiconductor memory device according to claim 7 , further comprising the step of forming a logic transistor on the semiconductor substrate.

13. A method of manufacturing a semiconductor memory device according to claim 6 , further comprising the concentrated ozone gas formation steps of:

preparing a mixture gas of ozone and oxygen;

cooling the mixture gas; and

evacuating the oxygen so as to increase the ozone concentration of the mixture gas before supplying concentrated ozone gas to a gas line which leads the concentrated ozone gas to a process chamber.