Method of forming magnetoresistive junctions in manufacturing MRAM cells

1. A method of manufacturing a magnetoresistive memory cell comprising a process of forming a magnetoresistive junction the process comprising:

providing a semiconductor substrate comprising at least one via contact layer on a main surface of the semiconductor substrate;

depositing a layered structure of magnetoresistive junction layers on the via contact layer;

depositing an etch stop layer on the layered structure of magnetoresistive junction layers;

depositing at least one hard mask layer on the etch stop layer;

patterning and etching the hard mask layer to create a hard mask, where etching stops at the etch stop layer;

removing of polymer residuals from side surfaces of the hard mask; and

selectively etching, via the hard mask, the etch stop layer and the layered structure of magnetoresistive junction layers to create the magnetoresistive junction.

2. The method of claim 1 , wherein the etch stop layer is a conductive layer.

3. The method of claim 1 , wherein a thickness of the etch stop layer is in a range between approximately 5 nm to 10 nm.

4. The method of claim 1 , wherein the etch stop layer comprises Ru, TaN or WN.

5. The method of claim 1 , wherein the at least one via contact layer includes a dielectric material with at least one contact via extending through the dielectric material.