Lead free solar cell contacts

1. A solar cell contact comprising, prior to firing:

A silicon semiconductor wafer;

A composition deposited on the silicon semiconductor wafer, the composition comprising:

a. A solids portion and

b. An organics portion,

c. Wherein the solids portion comprises

i. From about 85 to about 99 wt % of a conductive metal component silver, and

ii. From about 1 to about 15 wt % of a glass component, wherein the glass component is lead-free and cadmium-free, the glass component including from 50 to 80 mol % Bi 2 O 3 , from 15 to 35 mol % SiO 2 , from 1 to 15 mol % ZnO and from 1 to 15 mol % V 2 O 5 ;

wherein the glass component includes a second-phase crystalline material selected from the group consisting of alumino-silicates, bismuth borates, bismuth silicates, bismuth titanates, vanadates, bismuth vanadates, bismuth vanadium titanates, zinc borates, zinc titanates, zinc silicates, zirconium silicates, and reactions products thereof and combinations thereof.

2. The solar cell contact of claim 1 wherein the silicon semiconductor wafer includes an N-side and a P-side.

3. The solar cell contact of claim 2 wherein the composition is deposited on the N-side of the silicon semiconductor wafer.

4. The solar cell contact of claim 2 wherein the composition is deposited on the P-side of the silicon semiconductor wafer.

5. The solar cell contact of claim 1 wherein the glass component further comprises from about 0.1 to about 20 mol % of pentavalent oxide selected from the group consisting of P, Ta, Nb, and Sb.

6. The solar cell contact of claim 1 wherein the second phase crystalline material is bismuth borate.

7. The solar cell contact of claim 1 wherein the second phase crystalline material is bismuth silicate and the bismuth silicate is selected from the group consisting of 6Bi 2 O 3 .SiO 2 , Bi 2 O 3 .SiO 2 , 2Bi 2 O 3 .3SiO 2 , 12Bi 2 O 3 .SiO 2 , 2Bi 2 O 3 .SiO 2 , 3Bi 2 O 3 .5SiO 2 and Bi 2 O 3 .4SiO 2 .

8. The solar cell contact of claim 1 wherein the second phase crystalline material is bismuth titanate and the bismuth titanate is selected from the group consisting of Bi 2 O 3 .2TiO 2 , 2Bi 2 O 3 .3TiO 2 , 2Bi 2 O 3 .4TiO 2 , and 6Bi 2 O 3 .TiO 2 .

9. The solar cell contact of claim 1 wherein the second phase crystalline material is a vanadate and the vanadate is selected from the group consisting of MgO.V 2 O 5 , SrO.V 2 O 5 , CaO.V 2 O 5 , BaO.V 2 O 5 , ZnO.V 2 O 5 , Na 2 O.17V 2 O 5 , K 2 O.4V 2 O 5 , and 2Li 2 O.5V 2 O 5 .

10. The solar cell contact of claim 1 wherein the second phase crystalline material is bismuth vanadate and the bismuth vanadate is selected from the group consisting of 6Bi 2 O 3 .V 2 O 5 , BiVO 4 , 2Bi 2 O 3 .3V 2 O 5 , and BiV 3 O 9 .

11. The solar cell contact of claim 1 wherein the second phase crystalline material is bismuth vanadium titanate and the bismuth vanadium titanate is 6.5Bi 2 O 3 .2.5V 2 O 5 .TiO 2 .

12. The solar cell contact of claim 1 wherein the second phase crystalline material is zinc titanate and the zinc titanate is 2ZnO.3TiO 2 .

13. The solar cell contact of claim 1 wherein the second phase crystalline material is zinc silicate and the zinc silicate is ZnO.SiO 2 .

14. The solar cell contact of claim 1 wherein the second phase crystalline material is zirconium silicate and the zirconium silicate is ZrO 2 .SiO 2 .

15. The solar cell contact of claim 1 wherein the second phase crystalline material is zinc borate and the zinc borate is ZnO*B 2 O 3 .

16. The solar cell contact of claim 1 wherein the composition is fired for a time period of from 1 second to 5 minutes.

17. The solar cell contact of claim 16 wherein the composition is fired for a time period of from 1 second to 3 minutes.

18. The solar cell contact of claim 1 wherein the silver component comprises silver selected from the group consisting of flakes, powder, or colloidal particles of silver.

19. The solar cell contact of claim 18 wherein the solids portion further comprises phosphorus, at least a portion of which is present as a coating on at least a portion of the silver flakes, powder, or colloidal particles.

20. The solar cell contact of claim 1 wherein the solids portion comprises from about 3 to about 8 wt % of the glass component.

21. A solar cell contact comprising, prior to firing:

A silicon semiconductor wafer;

A composition deposited on the silicon semiconductor wafer, the composition comprising:

d. A solids portion and

e. An organics portion,

f. Wherein the solids portion comprises

i. From about 85 to about 99 wt % of a conductive metal component silver, and

ii. From about 1 to about 15 wt % of a glass component, wherein the glass component comprises:

15 to 80 mol % Bi 2 O 3 ;

2 to 45 mol % SiO 2 ;

0.1 to 25 mol % ZnO; and

0.1 to 25 mol % V 2 O 5 ;

wherein the glass component includes a second-phase crystalline material selected from the group consisting of alumino-silicates, bismuth borates, bismuth silicates, bismuth titanates, vanadates, bismuth vanadates, bismuth vanadium titanates, zinc borates, zinc titanates, zinc silicates, zirconium silicates, and reactions products thereof and combinations thereof.

22. The solar cell contact of claim 21 wherein the glass component comprises:

50 to 80 mol % Bi 2 O 3 ;

15 to 35 mol % SiO 2 ;

1 to 15 mol % ZnO; and

1 to 15 mol % V 2 O 5 .

wherein the silver component comprises silver selected from the group consisting of flakes, powder, or colloidal particles of silver, wherein the solids portion further comprises phosphorus, at least a portion of which is present as a coating on at least a portion of the silver flakes, powder, or colloidal particles.

23. The solar cell contact of claim 21 wherein the glass component further comprises from about 0.1 to about 20 mol % of pentavalent oxide selected from the group consisting of P, Ta, Nb, and Sb.

24. The solar cell contact of claim 21 wherein the glass component consists essentially of:

15 to 80 mol % Bi 2 O 3 ;

2 to 45 mol % SiO 2 ;

0.1 to 25 mol % ZnO; and

0.1 to 25 mol % V 2 O 5 .

25. The solar cell contact of claim 21 wherein the glass component consists essentially of:

50 to 80 mol % Bi 2 O 3 ;

15 to 35 mol % SiO 2 ;

1 to 15 mol % ZnO; and

1 to 15 mol % V 2 O 5 .

26. A solar cell contact comprising, prior to firing:

A silicon semiconductor wafer;

A composition deposited on the silicon semiconductor wafer, the composition comprising:

a. A solids portion and

b. An organics portion,

c. Wherein the solids portion comprises

i. From about 85 to about 99 wt % of a conductive metal component silver, and

ii. From about 1 to about 15 wt % of a glass component, wherein the glass component comprises:

10 to 40 mol % Bi 2 O 3 ;

30 to 65 mol % SiO 2 ;

3 to 20 mol % B 2 O 3 ; and

5 to 25 mol % alkali oxides;

wherein the glass component includes a second-phase crystalline material selected from the group consisting of alumino-silicates, bismuth borates, bismuth silicates, bismuth titanates, vanadates, bismuth vanadates, bismuth vanadium titanates, zinc borates, zinc titanates, zinc silicates, zirconium silicates, and reactions products thereof and combinations thereof.

27. The solar cell contact of claim 26 wherein the glass component consists essentially of:

10 to 40 mol % Bi 2 O 3 ;

30 to 65 mol % SiO 2 ;

3 to 20 mol % B 2 O 3 ; and

5 to 25 mol % alkali oxides.