Method for dividing substrate
View Patent ↗The present invention aims at providing a method for dividing a substrate that is capable of dividing each substrate into chips in the same square-like form without causing chip breaking and capable of forming all cleaved facets flat. In the method for dividing a substrate of the present invention, an electron beam 1 with the intensity that causes a dislocation inside the substrate is irradiated to a substrate surface 2 to generate a crack starting from such dislocation, and a cleaved facet 5 is formed to divide the substrate.
1. A method for dividing a substrate, comprising
irradiating, to a front surface of the substrate, an electron beam with an intensity to generate a dislocation inside the substrate, so as to cause a crack triggered by the dislocation and to divide the substrate,
wherein said irradiating includes irradiating the electron beam to the front surface of the substrate, while cooling a rear surface of the substrate.
2. The method for dividing the substrate according to claim 1 ,
wherein the substrate includes an insulating substrate and a metal film formed on the insulating substrate, and
said irradiating includes irradiating the electron beam to the metal film.
3. The method for dividing the substrate according to claim 2 ,
wherein a projected range of the electron beam in the substrate is greater than the thickness of the metal film.
4. The method for dividing the substrate according to claim 3 ,
wherein the substrate further includes a semiconductor layer that is formed on a rear surface of the insulating substrate on which the metal film is not formed and that is made of a material different from a material of the insulating substrate.
5. The method for dividing the substrate according to claim 1 ,
wherein the substrate includes a semiconductor layer, and
said irradiating includes irradiating the electron beam to the semiconductor layer.
6. The method for dividing the substrate according to claim 5 ,
wherein the semiconductor layer is made of InGaAIN.
7. The method for dividing the substrate according to claim 5 ,
wherein the substrate includes a part that is made of one of SiC, sapphire, GaN, Si, GaAs, and InP.
8. The method for dividing the substrate according to claim 5 ,
wherein a projected range of the electron beam in the substrate is greater than the thickness of the semiconductor layer.
9. The method for dividing the substrate according to claim 1 ,
wherein the substrate includes a dielectric film whose relative dielectric constant is 3.9 or lower, and
said irradiating includes irradiating the electron beam to the dielectric film.
10. The method for dividing the substrate according to claim 9 ,
wherein the dielectric film is made of one of fluorine doped silicon glass, organic silicate glass, polyimide material, and porous resin material.
11. The method for dividing the substrate according to claim 9 ,
wherein said irradiating includes irradiating, to the dielectric film, an electron beam whose projected range in the substrate is greater than the thickness of the dielectric film, after irradiating, to the dielectric film, an electron beam whose projected range in the substrate is less than the thickness of the dielectric film.
12. The method for dividing the substrate according to claim 1 ,
wherein a projected range of the electron beam is greater than a depth, in a depth direction of the substrate, from the front surface to an interface between two parts which have different temperatures and at which a crystal defect begins to be generated.
13. The method for dividing the substrate according to claim 1 ,
wherein the electron beam has a power density at which a dislocation is generated inside the substrate and at which the substrate does not dissolve.
14. The method for dividing the substrate according to claim 1 ,
wherein a semiconductor laser element is formed in the substrate.