Tensile-stressed microelectromechanical apparatus and tiltable micromirrors formed therefrom
View Patent ↗A microelectromechanical (MEM) apparatus is disclosed which includes a pair of tensile-stressed actuators suspending a platform above a substrate to tilt the platform relative to the substrate. A tensile stress built into the actuators initially tilts the platform when a sacrificial material used in fabrication of the MEM apparatus is removed. Further tilting of the platform can occur with a change in the ambient temperature about the MEM apparatus, or by applying a voltage to one or both of the tensile-stressed actuators. The MEM apparatus can be used to form a tiltable micromirror or an array of such devices, and also has applications for thermal management within satellites.
1. A microelectromechanical (MEM) apparatus, comprising:
(a) a substrate;
(b) a pair of tensile-stressed actuators located proximate to each other on the substrate and arranged noncollinearly to provide two oppositely-directed forces due to a built-in longitudinally-directed tensile stress which is directed along the length of at least one beam in each tensile-stressed actuator, with a change in the two oppositely-directed forces being produced by a change in temperature of at least one of the pair of tensile-stressed actuators; and
(c) a platform suspended above the substrate by the pair of tensile-stressed actuators, with the platform being initially tilted at an angle relative to the substrate in response to the two oppositely-directed forces acting at different locations on the platform due to the built-in longitudinally-directed tensile stress, and with the platform being tiltable at a different angle relative to the substrate with a change in the temperature of at least one of the pair of tensile-stressed actuators.
2. The MEM apparatus of claim 1 further comprising means for changing the temperature of at least one of the pair of tensile-stressed actuators, and thereby changing the angle of tilt of the platform relative to the substrate.
3. The MEM apparatus of claim 2 wherein the means for changing the temperature of at least one of the pair of tensile-stressed actuators comprises a change in an ambient temperature.
4. The MEM apparatus of claim 2 wherein the means for changing the temperature of at least one of the pair of tensile-stressed actuators comprises a voltage applied to one of the pair of tensile-stressed actuators to resistively heat that tensile-stressed actuator.
5. The MEM apparatus of claim 1 wherein the substrate comprises silicon.
6. The MEM apparatus of claim 1 wherein each tensile-stressed actuator comprises tungsten.
7. The MEM apparatus of claim 6 wherein each tensile-stressed actuator further comprises titanium nitride.
8. The MEM apparatus of claim 6 wherein the platform comprises tungsten.
9. The MEM apparatus of claim 8 wherein the platform comprises a mesh structure.
10. The MEM apparatus of claim 1 wherein each tensile-stressed actuator comprises silicon nitride.
11. The MEM apparatus of claim 10 wherein each tensile-stressed actuator further comprises polycrystalline silicon.
12. The MEM apparatus of claim 1 wherein the platform comprises a light-reflecting surface.
13. A microelectromechanical (MEM) apparatus, comprising:
(a) a substrate;
(b) a platform suspended above the substrate and further comprising a plurality of platform layers stacked one upon another and interconnected;
(c) a first tensile-stressed actuator connected between one of the platform layers and the substrate to suspend the platform above the substrate; and
(d) a second tensile-stressed actuator connected between another of the platform layers and the substrate to suspend the platform above the substrate, with a tensile stress in each tensile-stressed actuator acting to tilt the platform at an angle relative to the substrate.
14. The MEM apparatus of claim 13 wherein the angle of the platform relative to the substrate can be varied in response to actuation of one or both of the tensile-stressed actuators.
15. The MEM apparatus of claim 14 wherein each tensile-stressed actuator can be actuated with an voltage applied thereto.
16. The MEM apparatus of claim 13 wherein the angle of the platform relative to the substrate can be varied in response to an ambient temperature.
17. The MEM apparatus of claim 13 wherein each tensile-stressed actuator comprises at least one tensile-stressed beam.
18. The MEM apparatus of claim 13 wherein the substrate comprises silicon.
19. The MEM apparatus of claim 13 wherein each tensile-stressed actuator comprises tungsten.
20. The MEM apparatus of claim 19 wherein the platform comprises tungsten.
21. The MEM apparatus of claim 13 wherein each tensile-stressed actuator comprises silicon nitride.
22. The MEM apparatus of claim 21 wherein each tensile-stressed actuator further comprises polycrystalline silicon.
23. The MEM apparatus of claim 13 wherein the platform comprises a light-reflecting surface.
24. A microelectromechanical (MEM) apparatus, comprising:
(a) a substrate; and
(b) a platform suspended above the substrate by a plurality of tensile-stressed beams arranged in pairs proximate to the platform, and with one tensile-stressed beam of each pair of tensile-stressed beams being connected to the platform proximate to a top thereof, and with the other tensile-stressed beam of each pair of tensile-stressed beams being connected to the platform proximate to a bottom thereof so that the tensile-stressed beams of each pair of tensile-stressed beams are connected to the platform at two different heights above the substrate, and wherein the plurality of tensile-stressed beams in response to heating thereof generate a torsional force to tilt the platform at an angle to the substrate.