Resist for forming pattern and method for forming pattern using the same

1. A resist for forming a pattern, comprising:

a photo-initiator;

a liquid pre-polymer having a structure of the following formula containing a vinyl function group and a hydrophilic functional group; and

photo acid generator:

wherein each of the R 1 , R 2 and R 3 is one selected from the group consisting of H, fluorocarbon, methyl, ethyl, propyl and butyl, and at least one of the R 4 to R 8 is a hydrophilic group selected from the group consisting of OH, COOCH 3 , COOC 2 H 5 , COOC 3 H 7 , COOC 4 H 9 , SOOCH 3 , SOOC 2 H 5 , SOOC 3 H 7 and SOOC 4 H 9 , and the remaining of R 4 to R 8 is one selected from the group consisting of H, fluorocarbon, methyl, ethyl, propyl and butyl,

wherein liquid pre-polymer is about 80 to 88 WT % the resist, the photo-initiator is 10 to about 15 WT % of the resist, and the photo acid generator is about 2 to 8 WT % of the resist.

2. The resist of claim 1 , wherein the photo acid generator is at least one selected from the group consisting of triarylsulfonium salt and organic sulfonic ester.

3. The resist of claim 2 , wherein the organic sulfonic ester is at least one selected from the group consisting of nitrobenzyl sulfonate and imidosulfonate.

4. A method for forming a pattern, comprising:

forming an etching object layer on a substrate;

applying a resist on an etching object layer, the resist comprising a photo-initiator, and a liquid pre-polymer having a structure of the following formula containing a vinyl functional group and a hydrophilic functional group;

shaping the resist using a mold plate having an imprint formed therein; and

hardening the resist to form a resist pattern while the mold plate shaping the resist corresponding to the imprint:

wherein each of the R 1 , R 2 and R 3 is one selected from the group consisting of H, fluorocarbon, methyl, ethyl, propyl and butyl, and at least one of the R 4 to R 8 is a hydrophilic group selected from the group consisting of OH, COOCH 3 , COOC 2 H 5 , COOC 3 H 7 , COOC 4 H 9 , SOOCH 3 , SOOC 2 H 5 , SOOC 3 H 7 and SOOC 4 H 9 , and the remaining of R 4 to R 8 is one selected from the group consisting of H, fluorocarbon, methyl, ethyl, propyl and butyl.

5. The method of claim 4 , wherein the shaping the resist comprises: compressing the mold plate to contact the etching object layer, the mold plate having a hydrophobic group.

6. The method of claim 4 , wherein the hardening the resist comprises irradiating light on the resist while the mold plate holding the shape of the resist.

7. The method of claim 4 , wherein the resist becomes a linear polymer by light irradiation.

8. The method of claim 4 , wherein the mold plate comprises at least a groove.

9. The method of claim 4 , wherein the forming the etching object layer on a substrate comprises:

depositing one of a metal material, a semiconductor material and an insulative material on the substrate.

10. The method of claim 4 , further comprising:

etching the etching object layer by using the resist pattern as a mask; and

removing the resist pattern remaining on the etched object layer.

11. A method of forming a resist, comprising;

providing a liquid pre-polymer having structure of the following formula;

adding a photo-initiator and a photo acid generator to the liquid pre-polymer;

exposing the resulting mixture of the liquid pre-polymer, the photo-initiator and the photo acid generator with UV light to generate a linear polymer; and

wherein each of the R 1 , R 2 and R 3 is one selected from the group consisting of H, fluorocarbon, methyl, ethyl, propyl and butyl, at least one of the R 4 to R 8 is a hydrophilic group selected from the group consisting of OH, COOCH 3 , COOC 2 H 5 , COOC 3 H 7 , COOC 4 H 9 , SOOCH 3 , SOOC 2 H 5 , SOOC 3 H 7 and SOOC 4 H 9 , and the remaining of R 4 to R 8 is one selected from the group consisting of H, fluorocarbon, methyl, ethyl, propyl and butyl,

wherein liquid pre-polymer is about 80 to 88 WT % of the resist, the photo-initiator is 10 to about 15 WT % of the resist, and the photo acid generator is about 2 to 8 WT % of the resist: