Imaging sensor

1. An imaging sensor comprising:

a signal processing section;

a photo-current generating and collecting section; and

a separating region between said signal processing section and said photo-current generating and collecting section;

said photo-current generating and collecting section comprising

at least one photodiode well having a first type of conductivity,

at least one contact associated with said at least one photodiode well, and

a region surrounding said at least one photodiode well, adjacent said separating region and having a second type of conductivity.

2. An imaging sensor according to claim 1 wherein said separation region comprises an N-well.

3. An imaging sensor according to claim 1 wherein said separation region comprises a P-well.

4. An imaging sensor according to claim 1 wherein the first type of conductivity comprises a P-type conductivity, and the second type of conductivity comprises an N-type conductivity.

5. An imaging sensor according to claim 1 wherein the first type of conductivity comprises an N-type conductivity, and the second type of conductivity comprises a P-type conductivity.

6. An imaging sensor according to claim 1 wherein said at least one photodiode well has a length in a range of about 5-10 □m.

7. An imaging sensor according to claim 1 wherein said at least one photodiode well comprises a plurality of photodiode wells.

8. An imaging sensor according to claim 7 wherein said plurality of photodiode wells are spaced apart from each other by less than 50 □m.

9. An imaging sensor according to claim 7 further comprising at least one conductor connecting said plurality of photodiode wells together so that photo-currents therefrom are summed together.

10. An imaging sensor according to claim 1 wherein said signal processing section comprises a charge sensing amplifier.

11. An electronic device comprising:

an imaging sensor comprising

a semiconductor substrate,

a signal processing section in said semiconductor substrate,

a photo-current generating and collecting section in said semiconductor substrate; and

a separating region in said semiconductor substrate between said signal processing section and said photo-current generating and collecting section,

said photo-current generating and collecting section comprising

at least one photodiode well having a first type of conductivity,

at least one contact associated with said at least one photodiode well, and

a region surrounding said at least one photodiode well, adjacent said separating region and having a second type of conductivity.

12. An electronic device according to claim 11 wherein said separation region comprises at least one of an N-well and a P-well.

13. An electronic device according to claim 11 wherein the first type of conductivity comprises a P-type conductivity, and the second type of conductivity comprises an N-type conductivity.

14. An electronic device according to claim 11 wherein the first type of conductivity comprises an N-type conductivity, and the second type of conductivity comprises a P-type conductivity.

15. An electronic device according to claim 11 wherein said at least one photodiode well has a length in a range of about 5-10 □m.

16. An electronic device according to claim 11 wherein said at least one photodiode well comprises a plurality of photodiode wells.

17. An electronic device according to claim 16 wherein said plurality of photodiode wells are spaced apart from each other by less than 50 □m.

18. An electronic device according to claim 16 further comprising at least one conductor connecting said plurality of photodiode wells together so that photo-currents therefrom are summed together.

19. An electronic device according to claim 11 wherein said signal processing section comprises a charge sensing amplifier.

20. An electronic device according to claim 11 wherein the imaging sensor is integrated within at least one of a light-to-frequency converter, an optical mouse, a mobile phone and a digital camera.

21. A method for making an imaging sensor comprising:

forming a signal processing section;

forming a photo-current generating and collecting section; and

forming a separating region between the signal processing section and the photo-current generating and collecting section,

forming the photo-current generating and collecting section comprising

forming at least one photodiode well having a first type of conductivity,

forming at least one contact associated with the at least one photodiode well, and

forming a region surrounding the at least one photodiode well, adjacent the separating region and having a second type of conductivity.

22. A method according to claim 21 wherein the separation region comprises at least one of an N-well and a P-well.

23. A method according to claim 21 wherein the first type of conductivity comprises a P-type conductivity, and the second type of conductivity comprises an N-type conductivity.

24. A method according to claim 21 wherein the first type of conductivity comprises an N-type conductivity, and the second type of conductivity comprises a P-type conductivity.

25. A method according to claim 21 wherein the at least one photodiode well has a length in a range of about 5-10 □m.

26. A method according to claim 21 wherein the at least one photodiode well comprises a plurality of photodiode wells.

27. A method according to claim 26 wherein the plurality of photodiode wells are spaced apart from each other by less than 50 □m.

28. A method according to claim 26 further comprising forming at least one conductor connecting the plurality of photodiode wells together so that photo-currents therefrom are summed together.

29. A method according to claim 21 wherein the signal processing section comprises a charge sensing amplifier.