Electrophoretic display and method of manufacturing thereof
View Patent ↗A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.
1. An electrophoretic display, comprising:
a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of partitions having a plurality of openings, a plurality of organic semiconductor islands located in the openings and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrode;
a common electrode panel facing the thin film transistor array panel and having a common electrode; and
a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.
2. The electrophoretic display of claim 1 , further comprising:
a partition having a plurality of openings disposed on the data lines and the drain electrodes and defining the organic semiconductor islands.
3. The electrophoretic display of claim 2 , wherein the gate insulators are disposed in the plurality of openings.
4. The electrophoretic display of claim 1 , further comprising:
a passivation layer covering the gate line.
5. The electrophoretic display of claim 4 , wherein the pixel electrode is disposed on the passivation layer.
6. The electrophoretic display of claim 1 , wherein the pixel electrodes include opaque conductive material.
7. The electrophoretic display of claim 1 , wherein the gate electrode is closer than the organic semi conductor islands to the common electrode panel.
8. The electrophoretic display of claim 1 , wherein the thin film array panel and the common electrode panel are combined to each other by an adhesive.
9. The electrophoretic display of claim 1 , wherein the gate insulating layer comprises at least a material selected from the group consisting of silicon dioxide, silicon nitride, maleimide-styrene, polyvinylphenol (PVP), and modified cyanoethylpullulan (m-CEP).
10. The electrophoretic display of claim 1 , wherein the organic semiconductor comprises at least a material selected from the group consisting of:
tetracene, pentacene, and derivatives thereof with substituent;
oligothiophene including four to eight thiophenes connected at the positions 2 , 5 of the thiophene rings.
perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA), and imide derivatives thereof.
metallized phthalocyanine and halogenated derivatives thereof;
co-oligomer and co-polymer of thienylene and vinylene;
regioregular polythiophene;
perylene, coroene, and derivatives thereof with substituent; and
aromatic and heteroaromatic ring of the above-described material, with at least one hydrocarbon chain, having one to thirty carbon at atoms.