Photoconductor imagers with sandwich structure

1. A photoconductor assembly, comprising a photoconductor layer adapted to convert an electromagnetic radiation into electrical signals and having a first surface and a second surface, and a first layer disposed on the first surface of the photoconductor layer, said first layer comprising an insulator and a plurality of conductors embedded in the insulator adapted to conduct the electrical signals.

2. The photoconductor assembly of claim 1 , wherein said first layer is flexible.

3. The photoconductor assembly of claim 2 wherein the insulator is silicone rubber.

4. The photoconductor assembly of claim 1 wherein said first layer is thermal and/or radiation curable.

5. The photoconductor assembly of claim 1 wherein said conductors are in the form of elongated conductive lines.

6. The photoconductor assembly of claim 5 wherein said elongated conductive lines are spaced apart substantially in parallel.

7. The image acquisition device of claim 1 wherein the electromagnetic radiation is x-ray radiation.

8. The photoconductor assembly of claim 1 wherein said conductors are in the form of conductive particles.

9. The photoconductor assembly of claim 8 wherein said conductive particles are substantially spherical.

10. The photoconductor assembly of claim 9 wherein said conductive particles have a diameter equal or larger than a thickness of the insulator.

11. The photoconductor assembly of claim 1 wherein said insulator is made of a chemically stable material.

12. The photoconductor assembly of claim 1 wherein said first layer is adapted to transport electrical signals preferentially in one dimension.

13. An image acquisition device, comprising:

a photoconductor layer adapted to convert an electromagnetic radiation into electrical signals;

a first layer coupled to the photoconductor layer, said first layer comprising an insulator and a plurality of conductors embedded in the insulator adapted to conduct the electrical signals;

a first electrode coupled to the first layer and a second electrode coupled to the photoconductor, wherein said first and second electrodes create an electric field for transporting the electric signals via the plurality of conductors; and

a detector array adapted to detect the electric signals and coupled to said first electrode,

wherein said first layer is disposed between said photoconductor layer and said first electrode.

14. The image acquisition device of claim 13 wherein said first electrode is pixellated.

15. The image acquisition device of claim 14 wherein the density of the conductors is selected such that at least one or more conductors are in contact with each pixel.

16. The image acquisition device of claim 15 wherein the conductors are in the form of elongated conductive lines.

17. The image acquisition device of claim 16 wherein the diameter of the conductive lines is equal or smaller than a distance between two adjacent pixels.

18. The image acquisition device of claim 15 wherein the conductors are in the form of conductive spheres.

19. The image acquisition device of claim 18 wherein the diameter of the conductive spheres is equal or larger than the thickness of the insulator.

20. The image acquisition device of claim 13 wherein said insulator is made of a chemically stable material.

21. The image acquisition device of claim 13 wherein said detector array comprises an array of thin-film transistors.

22. The image acquisition device of claim 13 wherein said first layer is adapted to transport electrical signals preferentially in one dimension.

23. A method of making an image acquisition device, comprising the steps of:

providing a first panel comprising a detector array and a first electrode;

providing a second panel comprising a photoconductor layer and second electrode;

providing a first layer comprising an insulator and a plurality of conductors embedded in said insulator adapted to transport electric signals; and

sandwiching said first layer between said first and second panels such that said first layer is between said photoconductor layer and said first electrode.

24. The method of claim 23 wherein said first layer is flexible and said sandwiching step comprises compressing said first and second panels against said first layer.

25. The method of claim 23 wherein said first layer is thermally curable and said sandwiching step comprises heating the first layer.

26. The method of claim 23 wherein said first layer is radiation curable and said sandwiching step comprises radiating the first layer.

27. The method of claim 23 wherein said first electrode is pixellated, and the density of conductors in the insulator is selected such that at least one or more conductors are in contact with each pixel.

28. A photoconductor assembly, comprising:

a photoconductor layer adapted to convert an electromagnetic radiation into electrical signals;

a panel comprising a substrate, a detector array on the substrate, and an electrode on the detector array, said electrode being pixellated forming a plurality of pixel units, and said detector array comprising a plurality of detector elements each aligns with one of the pixel units; and

a first layer between said photoconductor layer arid said panel, said first layer comprising an insulator and a plurality of conductors embedded in the insulator adapted to transport the electrical signals from said photoconductor to said electrode.

29. The photoconductor assembly of claim 28 wherein said first layer is adapted to transport the electrical signals preferentially in one dimension.

30. The photoconductor assembly of claim 28 wherein said detector element comprises a thin-film transistor.

31. The photoconductor assembly of claim 28 wherein said conductors are in the form of elongated conductive lines.

32. The photoconductor assembly of claim 31 wherein the diameter of said conductive lines is smaller than a distance between two adjacent pixels.

33. The photoconductor assembly of claim 28 wherein said conductors are in the form of conductive spheres.

34. The photoconductor assembly of claim 33 wherein the diameter of the conductive spheres is smaller than a distance between two adjacent pixels.

35. The photoconductor assembly of claim 28 wherein said insulator is formed of a chemically stable material.