IP Library Granted Patent US 7,201,022
Granted Patent B2
US 7,201,022 · App. 11/154,629 · Granted Apr 10, 2007

Systems and methods for filling voids and improving properties of porous thin films

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,201,022
App. No.
11/154,629
Granted
Apr 10, 2007
Kind
B2
Abstract

Methods of reducing the intrusions or migrations of photolithography materials by introducing a sol-gel layer onto a porous thin film prior to applying the photolithography/photoresist material layer. Curing the sol-gel layer results in the sol-gel layer merging or unifying with the underlying porous thin film layer so that the combined sol-gel/thin layer exhibits substantially the same properties as the untreated porous thin film layer before the sol-gel was applied. As a result, a greater etching accuracy is achieved.

Claims (16)

1. A method of reducing the effects of surface penetrating defects in a substrate having a thin film, comprising:

providing a glass substrate;

applying a thin film on or over the glass substrate;

applying a sol-gel layer on or over the thin film, the sol-gel layer seeping into the thin film and filling at least some voids, cracks or other surface penetrating defects present in the thin film; and

curing the sol-gel layer to combine the sol-gel layer and the thin film layer into a sol-gel/thin film layer having reduced porosity and surface penetrating defects;

wherein curing the sol-gel yields the sol-gel/thin film layer that exhibits an etch rate that is substantially the same as the corresponding property in the thin film layer prior to applying the sol-gel layer;

applying a photoresist material layer to the sol-gel/thin-film layer;

exposing the photoresist material layer through a mask;

developing the photoresist material layer to achieve a pattern of protected portions of the sol-gel thin film layer;

applying an etchant to remove unprotected portions of the sol-gel/thin film layer; and

removing the photoresist material layer remaining over the protected portions of the sol-gel/thin film layer.

2. The method of claim 1 , wherein the sol-gel is a liquid.

3. The method of claim 1 , wherein curing the sol-gel yields the sol-gel/thin film layer that exhibits at least one additional property that is substantially the same as the corresponding property in the thin film layer prior to applying the sol-gel layer.

4. The method of claim 3 , wherein the at least one additional property is a coefficient of thermal expansion.

5. The method of claim 4 , wherein the sol-gel/thin film layer further exhibits an increased mechanical strength.

6. The method of claim 4 , wherein the at least one property includes, in addition, a substantially uniform medium for transmitting acoustic waves.