Thin film fuse phase change RAM and manufacturing method

1. A memory device, comprising:

a first electrode having a top side;

a second electrode having a top side;

an insulating member between the first electrode and the second electrode, the insulating member having a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode; and

a bridge across the insulating member, the bridge having a first side and a second side and contacting the top sides of first and second electrodes on the first side, and defining an inter-electrode path between the first and second electrodes across the insulating member, the inter-electrode path having a path length defined by the width of the insulating member, wherein the bridge comprises memory material having at least two solid phases, wherein the first and second electrodes and insulating member comprise elements in a single layer of materials, and the bridge includes a top side and a bottom side and said first side is the bottom side.

2. The device of claim 1 , wherein the single layer of materials has a substantially planar top surface, and the bottom side of the bridge contacts the substantially planar top surface of the single layer.

3. A memory device, comprising:

a substrate;

an electrode layer on the substrate, the electrode layer including an array of electrode pairs having first electrode having a top surface, a second electrode having a top surface, and an insulating member between the first electrode and the second electrode, and

an array of bridges across the insulating members of respective electrode pairs, the bridges having respective first sides and second sides and contacting the top surfaces of the first and second electrodes in the respective electrode pairs on the first sides, wherein the bridges comprise memory material having at least two solid phases.

4. The device of claim 3 , wherein the electrode layer comprises a dual damascene layer of materials.

5. The device of claim 3 , wherein the thickness of the insulating member in at least one of the electrode pairs is about 50 nm or less, and said bridge comprises a thin film with a thickness about 50 nm or less and a width about 50 nm or less.

6. The device of claim 3 , wherein the thickness of the insulating member in at least one of the electrode pairs is about 20 nm or less, and said bridge comprises a thin film with a thickness about 20 nm or less and a width about 20 nm or less.

7. The device of claim 3 , wherein the bridges in the array of bridges have respective thicknesses about 10 nm or less, and respective widths about 10 nm or less.

8. The device of claim 3 , wherein the electrode layer has a substantially planar top surface, and the bridges in the array of bridges contact the substantially planar top surface.

9. The device of claim 3 , wherein the two solid phases are reversibly inducible by a current.

10. The device of claim 3 , wherein the two solid phases are reversibly inducible by a voltage applied across the first and second electrodes.

11. The device of claim 3 , wherein the at least two solid phases include a generally amorphous phase and a generally crystalline phase.

12. The device of claim 3 , wherein the insulating members in the electrode layer between respective electrode pairs comprises silicon nitride.

13. The device of claim 3 , wherein the memory material comprises an alloy including a combination of Ge, Sb, and Te.

14. The device of claim 3 , wherein the memory material comprises an alloy including a combination of two or more materials from the group of Ge, Sb, Te, Se, In, Ti, Ga, Bi, Sn, Cu, Pd, Pb, Ag, S, and Au.

15. The device of claim 3 , wherein the electrode pairs comprise an element selected from a group consisting of Ti, W, Mo, Al, Ta, Cu, Pt, Ir, La, Ni, and Ru and alloys thereof.

16. The device of claim 3 , wherein the electrode pairs comprise Ti and N.

17. The device of claim 3 , wherein the electrode pairs comprise Ta and N.