Etching reaction device with protrusions
An etching reaction device ( 3 ) includes an etching reaction chamber ( 30 ), and a number of protrusions ( 301 ) arranged on the bottom of the etching reaction chamber. Thus it can economize the etching time and quickly complement the concentration of the etching liquid near to a wafer ( 7 ). The protrusions can reduce the capability of the etching reaction chamber, thus it can economize the etching liquid.
1 . An etching reaction device, comprising:
an etching reaction chamber; and
a plurality of protrusions arranged on a bottom of the etching reaction chamber.
2 . The etching reaction device as claimed in claim 1 , further comprising an etching liquid entrance associated with the bottom of the etching reaction chamber.
3 . The etching reaction device as claimed in claim 2 , further comprising an etching liquid transport pipe connected with the etching liquid entrance.
4 . The etching reaction device as claimed in claim 1 , further comprising a plurality of rollers in the etching reaction chamber.
5 . The etching reaction device as claimed in claim 1 , wherein the protrusions are made of polyvinylidene difluoride.
6 . The etching reaction device as claimed in claim 1 , wherein the protrusions are step-shaped.
7 . The etching reaction device as claimed in claim 1 , wherein the protrusions are columnar.
8 . The etching reaction device as claimed in claim 1 , wherein the protrusions tapered in cross-section.
9 . The etching reaction device as claimed in claim 1 , wherein the protrusions are triangular in cross-section.
10 . The etching reaction device as claimed in claim 1 , wherein the protrusions are rectangular in cross-section.
11 . A method of making etching comprising:
providing an etching device with an etching reaction chamber;
forming a plurality of protrusions on at least one interior surface of said etching device in communication with the etching reaction chamber; and
injecting etching liquid into the chamber; wherein
said protrusions performs at least one of functions of even distribution and convection.
12 . The method as claimed in claim 11 , wherein the protrusions surround a liquid entrance of said etching liquid.
13 . The method as claimed in claim 11 , wherein the protrusions and a liquid entrance of the etching liquid are located on a same interior face of the etching device.
14 . The method as claimed in claim 13 , wherein a wafer ready for etching is spatially located above both said liquid entrance and said protrusions.
15 . An etching reaction device, comprising:
an etching reaction chamber;
a plurality of protrusions disposed in the etching reaction chamber; and
a wafer located above said protrusions; wherein
etching liquid moves in said chamber under effects derived from said protrusions.
16 . The etching reaction device as claimed in claim 15 , wherein said protrusions are formed on a bottom interior face of the etching device.
17 . The etching reaction device as claimed in claim 16 , wherein an etching liquid entrance is located on the bottom interior face.