Method of manufacturing an AMOLED

1. A method of manufacturing an active matrix organic light-emitting diode (AMOLED), the method comprising:

providing a substrate;

forming at least a data line and at least a drain metal on the substrate;

forming a buffer insulator layer on the substrate, the data line and the drain metal;

forming at least an active layer on the buffer insulator layer;

forming a gate insulator layer on the active layer and the buffer insulator layer;

forming a gate metal on the gate insulator layer above the active layer;

using the gate metal as a self-alignment mask and doping an ion on the active layer to form a source and a drain on the corresponding sides of the gate metal;

forming a plurality of via holes on the gate insulator layer that reach the data line, the drain metal, the drain and the source surface;

forming a plurality of transparent electrodes on each via hole and the gate insulator layer surface, each transparent electrode electrically contacting with the data line, the drain, and the drain metal;

forming a pixel define layer on the transparent electrode, the gate metal, and the gate insulator layer to expose the transparent electrode; and

forming a light-emitting diode on the transparent electrode.

2. The method of claim 1 , wherein the substrate is selected from a group consisting of a transparent glass substrate, a pure substrate, a flexible plastic substrate, and a metal foil.

3. The method of claim 1 , wherein the method of forming the data line and the drain metal further comprises:

forming a first metal film on the substrate surface; and

performing a first PEP on the first metal film to form the data line and the drain metal.

4. The method of claim 1 , wherein the method of forming the active layer further comprises:

forming an amorphous silicon film on the buffer insulator layer surface;

re-crystallizing the amorphous silicon film, the amorphous silicon film becoming a poly silicon film; and

performing a second PEP on the poly silicon film to form the active layer.

5. The method of claim 1 , wherein the method of forming the gate metal further comprises:

forming a second metal film on the gate insulator layer surface; and

performing a third PEP on the second metal film to form the gate metal.

6. The method of claim 1 , wherein the via holes in the gate insulator layer are made by a fourth PEP.

7. The method of claim 1 , wherein the method of forming the transparent electrode and the pixel define layer further comprises:

forming a transparent electrode film on the gate insulator layer and the gate metal surface;

performing a fifth PEP on the transparent electrode film to form the transparent electrode; and

using a depositing process and a sixth PEP to form the pixel define layer.

8. The method of claim 7 , wherein the electric connect transparent electrode cover is wider than the drain metal, the AMOLED is a bottom emission LED panel and an upper-lower light emitting OLED panel.

9. The method of claim 7 , wherein the transparent electrode is ITO or IZO.

10. The method of claim 1 , wherein the pixel define layer is made by a spin on glass process.