Electrode with transparent series resistance for uniform switching of optical modulation devices
View Patent ↗Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.
1. An electrode for improving the switching uniformity of an optical modulation device, comprising:
a layer of a transparent conductive material deposited on a transparent substrate;
a layer of a transparent resistive material deposited on the layer of the transparent conductive material, wherein said transparent resistive material is a stoichiometric oxide of a single metal; and
a first surface modification layer deposited on the layer of the transparent resistive material.
2. The electrode of claim 1 , wherein the optical modulation device is based on a technology selected from the group consisting of reversible electrodeposition, electrochromic, organic light emitting diode, suspended particle, and liquid crystal.
3. The electrode of claim 1 , wherein the transparent conductive material is a doped metallic oxide selected from the group consisting of indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, fluorine-doped indium oxide, aluminum-doped tin oxide, phosphorus-doped tin oxide, and indium zinc oxide.
4. The electrode of claim 1 , wherein the transparent substrate comprises a material selected from the group consisting of glasses and plastics.
5. The electrode of claim 1 , wherein the transparent resistive material is a wide-bandgap metallic oxide.
6. The electrode of claim 5 , wherein the wide-bandgap metallic oxide is selected from the group consisting of magnesium oxide, yttrium oxide, zirconium oxide, aluminum oxide, indium oxide, titanium oxide, stannic oxide, silicon oxide, germanium oxide, zinc oxide, and mixtures thereof.
7. The electrode of claim 1 , further comprising: a second surface modification layer deposited on the first surface modification layer and comprising a noble metal selected from the group consisting of platinum, iridium, gold, osmium, palladium, rhenium, rhodium, ruthenium, and alloys thereof.
8. An electrode for improving the switching uniformity of an optical modulation device, comprising:
a layer of a transparent conductive material deposited on a transparent substrate;
a layer of a transparent resistive material deposited on the layer of the transparent conductive material; and
a first surface modification layer deposited on the layer of the transparent resistive material;
wherein the layer of the transparent resistive material is graded in thickness.
9. An electrode for improving the switching uniformity of an optical modulation device, comprising:
a layer of a transparent conductive material deposited on a transparent substrate;
a layer of a transparent resistive material deposited on the layer of the transparent conductive material; and
a first surface modification layer deposited on the layer of the transparent resistive material;
wherein the layer of the transparent resistive material is graded in composition.
10. An electrode for improving the switching uniformity of an optical modulation device, comprising:
a layer of a transparent conductive material deposited on a transparent substrate;
a layer of a transparent resistive material deposited on the layer of the transparent conductive material; and
a first surface modification layer deposited on the layer of the transparent resistive material;
wherein the first surface modification layer comprises a doped metallic oxide selected from the group consisting of indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, fluorine-doped indium oxide, aluminum-doped tin oxide, phosphorus-doped tin oxide, and indium zinc oxide.
11. An electrode for improving the switching uniformity of an optical modulation device, comprising:
a layer of a transparent conductive material deposited on a transparent substrate;
a layer of a transparent resistive material deposited on the layer of the transparent conductive material;
a first surface modification layer deposited on the layer of the transparent resistive material; and
a dot matrix of spheroids of a noble metal deposited on the first surface modification layer.
12. The electrode of claim 11 , wherein the noble metal is selected from the group consisting of platinum, iridium, gold, osmium, palladium, rhenium, rhodium, ruthenium, and alloys thereof.
13. A reversible electrochemical mirror optical modulation device with improved switching uniformity, comprising:
a counter electrode comprising a dot matrix of spheroids of a first noble metal deposited on a surface modification layer of a first transparent conductive material, which is deposited on a resistive layer of a transparent resistive material, which is deposited on a conductive layer of a second transparent conductive material, which is deposited on a first transparent substrate;
a mirror electrode comprising a nucleation layer of a second noble metal deposited on a layer of a third transparent conductive material, which is deposited on a second transparent substrate;
an electrolyte comprising ions of an electrodepositable metal; and
a charge of the electrodepositable metal subsisting on at least one of said electrodes, whereby the electrodepositable metal is reversibly electrodeposited on said mirror electrode and on said counter electrode so as to affect propagation of electromagnetic radiation.
14. The device of claim 13 , wherein the first and second noble metals are selected form the group consisting of platinum, iridium, gold, osmium, palladium, rhenium, rhodium, ruthenium, and alloys thereof.
15. The device of claim 13 , wherein the first, second and third transparent conductive materials are doped metallic oxides selected from the group consisting of indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, fluorine-doped indium oxide, aluminum-doped tin oxide, phosphorus-doped tin oxide, and indium zinc oxide.
16. The device of claim 13 , wherein the transparent resistive material is a wide-bandgap metallic oxide.
17. The device of claim 16 , wherein the wide-bandgap metallic oxide is selected from the group consisting of magnesium oxide, yttrium oxide, zirconium oxide, aluminum oxide, indium oxide, titanium oxide, stannic oxide, silicon oxide, germanium oxide, zinc oxide, and mixtures thereof.
18. The device of claim 13 , wherein the first and second transparent substrates comprise materials selected from the group consisting of glasses and plastics.
19. The device of claim 13 , wherein the resistive layer of the transparent resistive material is graded in thickness.
20. The electrode of claim 13 , wherein the resistive layer of the transparent resistive material is graded in composition.
21. The device of claim 13 , wherein said electrolyte is selected from the group consisting of aqueous solution, nonaqueous solution, and ionic liquid.
22. The device of claim 13 , wherein the electrodepositable metal is selected from the group consisting of silver, bismuth, copper, tin, cadmium, mercury, indium, lead, antimony, thallium, zinc, and alloys thereof.
23. A reversible electrochemical mirror optical modulation device with improved switching uniformity, comprising:
a mirror electrode comprising a nucleation layer of a first noble metal deposited on a surface modification layer of a first transparent conductive material, which is deposited on a resistive layer of a transparent resistive material, which is deposited on a conductive layer of a second transparent conductive material, which is deposited on a first transparent substrate;
a counter electrode comprising a dot matrix of spheroids of a second noble metal deposited on a layer of a third transparent conductive material;
an electrolyte comprising ions of an electrodepositable metal; and
a charge of the electrodepositable metal subsisting on at least one of said electrodes, whereby the electrodepositable metal is reversibly electrodeposited on said mirror electrode and on said counter electrode so as to affect propagation of electromagnetic radiation.
24. The device of claim 23 , wherein the first and second noble metals are selected form the group consisting of platinum, iridium, gold, osmium, palladium, rhenium, rhodium, ruthenium, and alloys thereof.
25. The device of claim 23 , wherein the first, second and third transparent conductive materials are doped metallic oxides selected from the group consisting of indium tin oxide, fluorine-doped tin oxide, aluminum-doped zinc oxide, antimony-doped tin oxide, fluorine-doped indium oxide, aluminum-doped tin oxide, phosphorus-doped tin oxide, and indium zinc oxide.
26. The device of claim 23 , wherein the transparent resistive material is a wide-bandgap metallic oxide.
27. The device of claim 26 , wherein the wide-bandgap metallic oxide is selected from the group consisting of magnesium oxide, yttrium oxide, zirconium oxide, aluminum oxide, indium oxide, titanium oxide, stannic oxide, silicon oxide, germanium oxide, zinc oxide, and mixtures thereof.
28. The device of claim 23 , wherein the first and second transparent substrates comprise materials selected from the group consisting of glasses and plastics.
29. The device of claim 23 , wherein the resistive layer of the transparent resistive material is graded in thickness.
30. The electrode of claim 23 , wherein the resistive layer of the transparent resistive material is graded in composition.
31. The device of claim 23 , wherein said electrolyte is selected from the group consisting of aqueous solution, nonaqueous solution, and ionic liquid.
32. The device of claim 23 , wherein the electrodepositable metal is selected from the group consisting of silver, bismuth, copper, tin, cadmium, mercury, indium, lead, antimony, thallium, zinc, and alloys thereof.