METHODS OF CONTROLLING THE PROPERTIES OF ABRASIVE PARTICLES FOR USE IN CHEMICAL-MECHANICAL POLISHING SLURRIES

1 . A method of removing at least a portion of a film disposed on a substrate by chemical-mechanical polishing, the method comprising:

preparing a slurry composition comprising doped cerium oxide abrasive particles having crystallites with crystal lattice structures that include cerium atoms and atoms of one or more metals other than cerium, wherein the abrasive particles in the slurry are formed by a hydrothermal process comprising the steps of:

(i) providing an aqueous reaction mixture comprising:

(a) one or more compounds that provide a source of cerium ions, and

(b) one or more compounds that provide a source of doping ions selected from the group consisting of Be, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Ge, As, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ba, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Hp, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, TI, Pb, Bi, and combinations thereof,

(ii) contacting the aqueous reaction mixture with a base to raise the pH to above about 1.5, and,

(iii) subjecting the aqueous reaction mixture to hydrothermal treatment at a temperature of from about 70° C. to about 500° C. to produce the abrasive particles,

wherein the abrasive particles in the slurry have a primary particle size, a secondary particle size, an elemental composition, and a morphology that is sufficient to produce a desired film removal rate using a predetermined set of chemical-mechanical polishing parameters,

wherein the primary particle size of the abrasive particles is inversely proportional to doping ion concentration, inversely proportional to the doping ion valence, proportional to the base concentration, proportional to reaction temperature and proportional to reaction time,

wherein the secondary particle size of the abrasive particles is proportional to doping ion concentration, proportional to doping ion valence, proportional to base concentration, inversely proportional to reaction temperature and inversely proportional to reaction time, and

wherein the elemental composition of the abrasive particles is determined by the initial concentrations of cerium ions and doping ions in the reaction mixture; and

polishing the film using the slurry composition to remove at least a portion of the film.

2 . The method of claim 1 wherein the particle morphology is determined by the use of a basic hydroxide anion-contributing reagent such that the particle volume is proportional to the concentration of hydroxide anion contributed by said reagent.

3 . In a chemical-mechanical polishing operation for removing at least a portion of a film disposed on a substrate using a polishing apparatus and a slurry composition comprising abrasive particles, the improvement comprising selecting a primary and a secondary size of the abrasive particles, an elemental composition of the abrasive particles, a morphology of the abrasive particles, and a pH of the slurry composition to control the rate at which the film is removed.

4 . A method of producing a doped cerium oxide abrasive via a hydrothermal process for use in formulating a slurry composition that removes a film disposed on a substrate at a different removal rate than a slurry composition containing the same constituents, except for the doped cerium oxide abrasive, using the same chemical-mechanical polishing parameters, the method comprising:

varying a primary particle size, a secondary particle size and/or a lattice strain of the doped cerium oxide abrasive by altering:

(i) valence of a doping ion used to form the doped cerium oxide abrasive;

(ii) initial concentration of the doping ion in a reaction mixture to make the doped cerium oxide abrasive;

(iii) reaction temperature; and/or

(iv) reaction time.

5 . In the fabrication of an electronic device wherein a film is removed by chemical-mechanical polishing using a slurry comprising abrasive particles, the improvement comprising adjusting the rate of film removal without changing polishing parameters including rotation speed and pressure of the polishing apparatus and the flow rate of the slurry by selectively altering the chemical composition, lattice strain and/or morphology of the abrasive particles.

6 . A method of removing a film in a chemical-mechanical polishing operation comprising:

providing an apparatus for chemical-mechanical polishing a substrate using predetermined polishing parameters;

using a first slurry composition that removes the film at a first removal rate;

providing a second slurry composition for use in place of the first slurry composition to remove the film at a second removal rate, and

blending the first and second slurries in sufficient quantities and ratios to provide any removal rate between the first and second removal rates.

7 . In an electronic device fabrication process wherein a slurry composition is used to remove a film on a substrate by chemical-mechanical polishing, the improvement comprising selectively formulating the slurry composition using doped cerium oxide abrasives formed via a hydrothermal synthesis process to alter the film removal rate without changing any other chemical-mechanical polishing parameters, the doped cerium oxide abrasives having crystallites containing cerium atoms and one or more doping atoms of elements selected from the group consisting of Be, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Ga, Ge, As, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ba, La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Hp, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, and Bi, the doping ions producing a lattice strain sufficient to produce the desired film removal rate.