Light-colored ESD safe ceramics
View Patent ↗Aspects of the present invention may be found in an electrostatic dissipative ceramic component having a stabilized zirconia base, a surface resistivity between 1×10 5 and 1×10 12 ohms per square and at least 2 percent by volume scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent. Further aspects of the invention may be found in an electrostatic dissipative ceramic material having stabilized zirconia, a resistivity modifier, and a scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent of the ceramic material. The resistivity modifier may be present in amounts between 5 and 30 weight percent. The scattering material may comprise at least 2 volume percent of the electrostatic dissipative ceramic material. The component may be used in the manufacturing of electronic component such as hard drives.
1. A method for manufacturing an electronic component, the method comprising:
providing a support apparatus for supporting the electronic component, the support apparatus comprising between 60 and 95 weight percent stabilized zirconia and at least 2 volume percent scattering material, the support apparatus having a surface resistivity between 1×10 5 and 1×10 12 ohms per square, a refraction index at least 0.25 less than the refractive index of zirconia and a lightness L* greater than about 50; and
processing the electronic component.
2. The method of claim 1 , wherein the support apparatus is a carrier.
3. The method of claim 1 , wherein the support apparatus is a jig.
4. The method of claim 1 , wherein the electronic component is a magneto-resistive head.
5. The method of claim 1 , wherein the processing is lapping.
6. The method of claim 1 , wherein the processing is machining of a magneto-resistive head bearing surface.
7. A method for manufacturing a hard drive, the method comprising:
providing a support for a hard drive component, the support comprising an electrostatic dissipative material, the electrostatic dissipative material comprising between 60 and 95 weight percent stabilized zirconia and at least 2 volume percent scattering material, the electrostatic dissipative material having a surface resistivity between 1×10 5 and 1×10 12 ohms per square, a refraction index at least 0.25 less than the refractive index of zirconia and a lightness L* greater than about 50; and
processing the hard drive component.
8. The method of claim 7 , wherein the bard drive component is a magneto-resistive head.
9. The method of claim 7 , wherein the processing is lapping.
10. The method of claim 7 , wherein the processing is a pick and place process.
11. The method of claim 7 , wherein the support is a jig.
12. The method of claim 1 , wherein the lightness L* is greater than about 75.
13. The method of claim 7 , wherein the lightness L* is greater than about 75.
14. The method of claim 1 , wherein the scattering material is selected from the group consisting of yttrium aluminum garnet zinc aluminate, magnesium aluminate, yttrium phosphate, magnesium silicate, beryllium alunainosilicate, and calcium flouride.
15. The method of claim 7 , wherein the scattering material is selected from the group consisting of yttrium aluminum garnet, zinc aluminate, magnesium aluminate, yttrium phosphate, magnesium silicate, beryllium alumina silicate, and calcium flouride.
16. The method of claim 1 , wherein the scattering material is selected from the group consisting of phosphates, silicates, aluminosilicates, and fluorides.
17. The method of claim 7 , wherein the scattering material is selected from the group consisting of phosphates, silicates, aluminosilicates, and fluorides.
18. The method of claim 1 , further comprising a resistivity modifier selected from the group consisting of zinc oxide, tin oxide, indium oxide, gallium oxide, and cadmium oxide.
19. The method of claim 7 , further comprising a resistivity modifier selected from the group consisting of zinc oxide, tin oxide, indium oxide, gallium oxide, and cadmium oxide.
20. The method of claim 1 , wherein the support apparatus has a diffuse reflectance of greater than 20 percent at 450 nm.
21. The method of claim 7 , wherein the support apparatus has a diffuse reflectance of greater than 20 percent at 450 nm.
22. The method of claim 1 , wherein the grain size of the scattering material is between about 0.05 μm and about 5 μm.
23. The method of claim 7 , wherein the grain size of the scattering material is between about 0.05 μm and about 5 μm.
24. The method of claim 1 , wherein the support apparatus further comprises between 5 and 30 weight percent resistivity modifier, and at least 2 volume percent scattering material.
25. The method of claim 7 , wherein the support apparatus further comprises between 5 and 30 weight percent resistivity modifier, and at least 2 volume percent scattering material.