Manufacturing method of a liquid crystal display device comprising a first photosensitive layer of a positive type and a second photosensitive layer of a negative type

1. A manufacturing method of a liquid crystal display device, comprising:

forming a gate line and a data line on a substrate, the gate and data lines crossing each other to define a pixel region;

forming a thin film transistor at a crossing portion of the gate and data lines;

forming a passivation layer on the substrate and the thin film transistor;

forming a transparent conductive layer on the passivation layer;

forming a first photosensitive layer on a portion of the transparent conductive layer over the thin film transistor;

forming a second photosensitive layer contacting and directly on the transparent conductive layer and the first photosensitive layer;

patterning the second photosensitive layer and the first photosensitive layer to form a photosensitive pattern and a columnar spacer exposing a portion of the transparent conductive layer, wherein the photosensitive pattern includes first and second patterns, the first pattern is disposed directly over the columnar spacer, and the second pattern is disposed in the pixel region;

forming a pixel electrode by patterning the transparent conductive layer exposed by the photosensitive pattern and the columnar spacer, wherein the pixel electrode is disposed directly under the second pattern; and

removing the photosensitive pattern,

wherein the first photosensitive layer is a positive type, and the second photosensitive layer is a negative type, wherein patterning the second photosensitive layer and the first photosensitive layer includes:

disposing a mask having a transmitting portion and a blocking portion over the second photosensitive layer, the transmitting portion corresponding to both the pixel electrode and a center of the columnar spacer;

exposing the second photosensitive layer to light through the mask; and

simultaneously removing a peripheral portion of the second photosensitive layer and a peripheral portion of the first photosensitive layer corresponding to the blocking portion.

2. The method according to claim 1 , wherein the first photosensitive layer is formed by an inkjet method.

3. The method according to claim 1 , wherein patterning the second photosensitive layer and the first photosensitive layer includes removing a central portion of the first photosensitive layer using a lift-off method when the second photosensitive layer exposed to light is removed.

4. The method according to claim 1 , wherein the thin film transistor includes a gate electrode connected to the gate line, an active layer disposed over the gate electrode, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode and connected to the pixel electrode.

5. The method according to claim 4 , wherein the passivation layer includes a contact hole exposing the drain electrode.

6. The method according to claim 5 , wherein the pixel electrode contacts the drain electrode through the contact hole.

7. The method according to claim 1 , wherein the predetermined thickness of the first photosensitive layer is within a range of about 1 μm to about 7 μm.

8. A manufacturing method of a liquid crystal display device, comprising:

forming a transparent conductive layer on a substrate;

forming a first photosensitive layer on a portion of the transparent conductive layer using an inkjet method;

forming a second photosensitive layer contacting and directly on the transparent conductive layer and the first photosensitive layer;

patterning the second photosensitive layer and the first photosensitive layer to form a photosensitive pattern and a columnar spacer exposing a portion of the transparent conductive layer, wherein the photosensitive pattern includes first and second patterns, the first pattern is disposed directly over the columnar spacer;

removing the portion of the transparent conductive layer exposed by the photosensitive pattern and the columnar spacer to form a pixel electrode, wherein the pixel electrode is disposed directly under the second pattern; and

removing the photosensitive pattern,

wherein the first photosensitive layer is a positive type, and the second photosensitive layer is a negative type, wherein patterning the second photosensitive layer and the first photosensitive layer includes:

disposing a mask having a transmitting portion and a blocking portion over the second photosensitive layer, the transmitting portion corresponding to both the pixel electrode and a center of the columnar spacer;

exposing the second photosensitive layer to light through the mask; and

simultaneously removing a peripheral portion of the second photosensitive layer and a peripheral portion of the first photosensitive layer corresponding to the blocking portion.

9. The method according to claim 8 , wherein the columnar spacer has a thickness corresponding to a cell gap of the liquid crystal display device.