Polishing solution of metal and chemical mechanical polishing method
A polishing solution for metal comprises a specific compound represented and an oxidizing agent. A chemical mechanical polishing method for a semiconductor substrate, comprises: supplying a polishing solution for metal comprising a specific compound; and an oxidizing agent; allowing a polishing face and a face to be polished to be moved relatively to each other while the polishing face and the face to be polished are in contact with each other via the polishing solution for metal; and performing polishing with a contact pressure between the polishing face and the face to be polished in the range of from 1000 to 25000 Pa.
1 . A polishing solution for metal comprising:
a compound represented by formula (I); and
an oxidizing agent:
wherein R 1 and R 2 each independently represents a hydrogen atom or a substituent, R 1 and R 2 may form a ring by combining with each other and, when R 1 and R 2 simultaneously represent a hydrogen atom, the compound represented by formula (I) may be a tautomer.
2 . The polishing solution for metal according to claim 1 , which either not comprises abrasive grains or comprises the abrasive grains in a concentration of less than 0.01% by mass.
3 . The polishing solution for metal according to claim 1 , which comprises the abrasive grains in a concentration of 0.01% by mass or more.
4 . The polishing solution for metal according to claim 1 , further comprising at least one of an organic acid and an amino acid.
5 . A chemical mechanical polishing method comprising:
allowing the polishing solution for metal according to claim 1 to be in contact with a surface to be polished; and
performing polishing by moving the surface to be polished and a polishing surface relatively to each other.
6 . A chemical mechanical polishing method for a semiconductor substrate, comprising:
supplying a polishing solution for metal comprising: at least one compound selected from compounds represented by formulae (I) and (II); and an oxidizing agent;
allowing a polishing face and a face to be polished to be moved relatively to each other while the polishing face and the face to be polished are in contact with each other via the polishing solution for metal; and
performing polishing with a contact pressure between the polishing face and the face to be polished in the range of from 1000 to 25000 Pa:
wherein R 1 and R 2 each independently represents a hydrogen atom or a substituent, R 1 and R 2 may form a ring by combining with each other and, when R 1 and R 2 simultaneously represent a hydrogen atom, the compound represented by formula (I) may be a tautomer; and
R 3 to R 8 each independently represents a hydrogen atom or a substituent, any two-adjacent to each other of R 3 to R 8 may form a ring by combining with each other and M + represents a cation.
7 . The chemical mechanical polishing method for the semiconductor substrate according to claim 6 ,
wherein a speed of an average relative movement between the polishing face and the face to be polished is in the range of 0.5 to 5.0 m/s.
8 . The chemical mechanical polishing method for the semiconductor substrate according to claim 6 ,
wherein the face to be polished is a face comprising at least one of copper, a copper alloy, a tantalum-containing compound and an insulating material having a low dielectric constant.