IP Library Granted Patent US 7,494,396
Granted Patent B2
US 7,494,396 · App. 11/170,145 · Granted Feb 24, 2009

Organic electroluminescent device including transparent conductive layer and fabricating method thereof

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Quick Facts
Patent No.
US 7,494,396
App. No.
11/170,145
Granted
Feb 24, 2009
Kind
B2
Abstract

A method of fabricating an electrode for an organic electroluminescent device includes forming a transparent conductive layer on a substrate, doping the transparent conductive layer with impurities, and annealing the doped transparent conductive layer.

Claims (30)

1. A method of fabricating an electrode for an organic electroluminescent device, comprising steps of:

forming a transparent conductive layer on a substrate;

doping the transparent conductive layer with accelerated impurities; and

annealing the doped transparent conductive layer,

wherein the electrode is coupled to a hole injection layer,

wherein the transparent conductive layer includes at least one of indium-tin-oxide And indium-zinc-oxide, and

wherein the hole injection layer has a work function between about 5.2 eV and About 5.3 eV, and the transparent conductive layer has a work function of about 4.84 eV.

2. The method according to claim 1 , wherein the transparent conductive layer is doped with impurities between about 5×10 14 ions/cm 2 and about 3×10 15 ions/cm 2 at an acceleration voltage of about 30 kV.

3. The method according to claim 1 , wherein the step of annealing the doped transparent conductive layer includes annealing the doped transparent conductive layer at a temperature between about 230° C. and about 400° C. for a time period between about 30 minutes to about 2 hours.

4. The method according to claim 1 , wherein the step of annealing the doped transparent conductive layer includes annealing the doped transparent conductive layer at a temperature of about 400° C. for about 30 minutes.

5. The method according to claim 1 , wherein the step of doping the transparent conductive layer includes doping the transparent conductive layer to a maximum concentration depth equal to about 30% of a thickness of the transparent conductive layer.

6. The method according to claim 1 , wherein the impurities are positive type (p-type) impurities.

7. The method according to claim 6 , wherein the impurities are compounds including boron impurities.

8. The method according to claim 1 , wherein the impurities are negative type (n-type) impurities.

9. The method according to claim 8 , wherein the impurities are compounds including phosphorus impurities.

10. A method of fabricating an organic electroluminescent device, comprising steps of:

forming a transparent conductive layer on a substrate;

doping the transparent conductive layer with accelerated impurities;

annealing the transparent conductive layer doped with the accelerated impurities to form a first electrode;

forming a plurality of organic electroluminescent layers to include a first organic electroluminescent layer and a second organic electroluminescent layer such that the first organic electroluminescent layer is coupled to the first electrode; and

forming a second electrode coupled to the second organic electroluminescent layer,

wherein the transparent conductive layer includes at least one of indium-tin-oxide and indium-zinc-oxide, and

wherein the first organic electroluminescent layer has a work function between about 5.2 eV and about 5.3 eV, and the transparent conductive layer has a work function of about 4,84 eV.

11. An electrode of an organic electroluminescent device produced by a process comprising:

forming a transparent conductive layer on a substrate;

doping the transparent conductive layer with accelerated impurities; and

annealing the doped transparent conductive layer,

wherein the electrode is coupled to a hole injection layer,

wherein the transparent conductive layer includes at least one of indium-tin-oxide and indium-zinc-oxide, and

wherein the hole injection layer has a work function between about 5.2 eV and about 5.3 eV, and the transparent conductive layer has a work function of about 4.84 eV.

Assignments (1)
CHANGE OF NAME Recorded Jun 19, 2008
From: LG.PHILIPS LCD CO., LTD.
To: LG DISPLAY CO., LTD.
Reel/Frame 021147/0009 →