Electrical lapping guide disposed laterally relative to a shield pedestal
View Patent ↗Methods are provided for fabricating an electrical lapping guide, and for using the electrical lapping guide to fabricate a transducer of a magnetic recording head. Additionally, transducers comprising an electrical lapping guide are also provided. Methods of fabricating the electrical lapping guide comprise forming a resistive element proximate to a shield pedestal. Accordingly, the resistive element is both aligned with the shield pedestal in a transverse direction, and closely spaced from the shield pedestal in a longitudinal direction. The resistance of the resistive element correlates well with a throat height of the shield pedestal, and the correlation is utilized in the methods of fabricating the transducer. When a magnetoresistive stripe is uses as a second electrical lapping guide while fabricating the transducer, the two can be used to control a tilt angle in the transverse direction during lapping.
1. A method of fabricating an electrical lapping guide (ELG), the method comprising:
providing a substrate;
forming a writer pole layer above the substrate;
forming a gap layer of a dielectric material above the writer pole layer;
forming a patch of an electrically conductive material above the gap layer;
forming a mask layer over the gap layer, the mask layer including an ELG opening above the patch and a shield pedestal opening laterally disposed relative to the patch;
forming a shield pedestal layer within the shield pedestal opening and forming an ELG mask within the ELG opening;
removing the mask layer;
removing the patch except for a resistive element portion covered by the ELG mask; and
removing the ELG mask to expose the resistive element portion.
2. The method of claim 1 wherein forming the patch includes sputtering a noble metal.
3. The method of claim 2 wherein sputtering the noble metal includes sputtering gold.
4. The method of claim 1 further comprising forming a seed layer over the gap layer before forming the mask layer.
5. The method of claim 4 wherein removing the patch includes removing the seed layer except where the seed layer is covered by the shield pedestal layer and the ELG mask.
6. The method of claim 1 wherein forming the mask layer includes patterning a layer of photoresist.
7. The method of claim 1 wherein forming the shield pedestal layer and the ELG mask includes plating.
8. The method of claim 1 wherein removing the patch includes plasma etching.
9. The method of claim 1 wherein removing the ELG mask includes wet chemical etching.
10. The method of claim 1 further comprising forming a pair of electrical contacts on the resistive element portion.