Strain control of epitaxial oxide films using virtual substrates

1. A method of controlling strain in a single-crystal, epitaxial oxide film, comprising:

preparing a silicon substrate;

forming a silicon alloy layer overlying and in direct contact with the silicon substrate;

depositing a single-crystal, epitaxial oxide film, taken from the group of oxide films consisting of perovskite manganite materials; single crystal rare-earth oxides and perovekite oxides, not containing manganese; and rare earth binary and ternary oxides, overlying and in direct contact with the silicon alloy layer; and

completing a desired device.

2. The method of claim 1 which further includes doping the silicon substrate prior to said forming a silicon alloy layer on the silicon substrate.

3. The method of claim 2 wherein said doping is taken from the types of doping consisting of n-type doping and p-type doping.

4. The method of claim 1 which further includes doping the silicon alloy layer prior to said deposing an oxide film on the silicon alloy film.

5. The method of claim 4 wherein said doping is taken from the types of doping consisting of n-type doping and p-type doping.

6. The method of claim 1 wherein said forming a silicon alloy layer on the silicon substrate includes forming a silicon alloy layer taken from the group of silicon alloy layers consisting of Si 1-x Ge x and Si 1-y C y .

7. The method of claim 1 which includes adjusting the lattice constant of the silicon alloy layer by selecting the alloy material content to adjust and to select a type of strain for the silicon alloy layer, resulting in a deposited oxide film having a desired lattice constant and strain.

8. The method of claim 1 wherein said depositing an oxide film includes depositing an oxide film by atomic layer deposition.

9. The method of claim 8 wherein said depositing an oxide film by atomic layer deposition includes low temperatures atomic layer deposition at a temperature of between about 200° C. to 300° C. to inhibit interfacial SiO 2 formation via oxygen diffusion.

10. A method of controlling strain in a single-crystal, epitaxial oxide film, comprising:

preparing a silicon substrate;

forming a SiGe alloy layer overlying and in direct contact with the silicon substrate;

depositing a single-crystal, epitaxial oxide film, taken from the group of oxide films consisting of perovakite manganite materials, single crystal rare-earth oxides and perovskite oxides, not containing manganese; and rare earth binary and ternary oxides, overlying and in direct contact with the silicon alloy layer;

controlling strain in the single-crystal, epitaxial oxide film; and

completing a desired device.

11. The method of claim 10 wherein said forming a SiGe alloy layer on the silicon substrate includes forming a Si 1-x Ge x layer.

12. The method of claim 10 which includes adjusting the lattice constant of the SiGe alloy layer by selecting the alloy material content to adjust and to select a type of strain for the SiGe alloy layer, resulting in a deposited oxide film having a desired lattice constant and strain.

13. The method of claim 10 wherein said depositing an oxide film includes depositing an oxide film by atomic layer deposition.

14. The method of claim 13 wherein said depositing an oxide film by atomic layer deposition includes low temperature atomic layer deposition at a temperature of between about 200° C. to 300° C. to inhibit interfacial SiO 2 formation via oxygen diffusion.

15. The method of claim 10 which further includes doping the silicon substrate prior to said forming a silicon alloy layer on the silicon substrate, wherein said doping is taken from the types of doping consisting of n-type doping and p-type doping.

16. The method of claim 10 which further includes doping the SiGe alloy layer prior to said deposing an oxide film on the SiGe alloy film, wherein said doping is taken from the types of doping consisting of n-type doping and p-type doping.

17. A method of controlling strain in a single-crystal, epitaxial oxide film, comprising:

preparing a silicon substrate;

forming a forming a silicon alloy layer taken from the group of silicon alloy layers consisting of Si 1-x Ge x and Si 1-y C y overlying and in direct contact with the silicon substrate;

adjusting the lattice constant of the silicon alloy layer by selecting the alloy material content to adjust and to select a type of strain for the silicon alloy layer;

depositing a single-crystal, epitaxial oxide film, by atomic layer deposition, taken from the group of oxide films consisting of perovskite manganite materials, single crystal rare-earth oxides and perovskite oxides, not containing manganese; and rare earth binary and ternary oxides, overlying and in direct contact with the silicon alloy layer; and

completing a desired device.

18. The method of claim 17 wherein said depositing an oxide film by atomic layer deposition includes low temperatures atomic layer deposition at a temperature of between about 200° C. to 300° C. to inhibit interfacial SiO 2 formation via oxygen diffusion.

19. The method of claim 17 which further includes doping the silicon substrate prior to said forming a silicon alloy layer on the silicon substrate, wherein said doping is taken from the types of doping consisting of n-type doping and p-type doping.

20. The method of claim 17 which further includes doping the silicon alloy layer prior to said depositing an oxide film on the silicon alloy film, wherein said doping is taken from the types of doping consisting of n-type doping and p-type doping.