Silica glass containing TiO
View Patent ↗A silica glass containing TiO 2 , characterized in that the fluctuation of the refractive index (Δn) is at most 2×10 −4 within an area of 30 mm×30 mm in at least one plane. A silica glass containing TiO 2 , characterized in that the TiO 2 concentration is at least 1 mass %, and the striae pitch is at most 10 μm. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO 2 , and the fluctuation of the refractive index (Δn) is at most 2×10 −4 in a plane perpendicular to the incident light direction. An optical material for EUV lithography, characterized in that it is made of a silica glass containing TiO 2 , wherein the TiO 2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO 2 concentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.
1. A silica glass obtained by flame hydrolysis containing TiO 2 , characterized in that the fluctuation of the refractive index (Δn) is at most 5×10 −5 within an area of 30 mm×30 mm in at least one plane.
2. The silica glass containing TiO 2 according to claim 1 , wherein the fluctuation of the refractive index (Δn) is at most 2×10 −4 within an area of 30 mm×30 mm in each of two orthogonal planes.
3. A silica glass obtained by flame hydrolysis containing TiO 2 , characterized in that the TiO 2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO 2 concentration is at most 0.06 mass % within an area of 30 mm×30 mm in at least one plane.
4. The silica glass containing TiO 2 according to claim 3 , wherein the difference between the maximum value and the minimum value of the TiO 2 concentration is at most 0.06 mass % within an area of 30 mm×30 mm in each of two orthogonal planes.
5. A silica glass obtained by flame hydrolysis containing TiO 2 characterized in that the TiO 2 concentration is at least 1 mass %, and the striae pitch is at most 10 μm.
6. The silica glass containing TiO 2 according to claim 1 , wherein the striae pitch is at most 10 μm.
7. An optical material for EUV lithography, characterized in that it is made of a silica glass obtained by flame hydrolysis containing TiO 2 , and the fluctuation of the refractive index (Δn) is at most 2×10 −4 in a plane perpendicular to the incident light direction.
8. The optical material for EUV lithography according to claim 7 , wherein there is no striae which cause a fluctuation of the refractive index (Δn) exceeding 2×10 −4 in a plane perpendicular to the incident light direction.
9. An optical material for EUV lithography, characterized in that it is made of a silica glass obtained by flame hydrolysis containing TiO 2 , wherein the TiO 2 concentration is at least 1 mass %, and the difference between the maximum value and the minimum value of the TiO 2 concentration is at most 0.06 mass % in a plane perpendicular to the incident light direction.
10. The optical material for EUV lithography according to claim 9 , wherein there is no striae which cause a difference between the maximum value and the minimum value of the TiO 2 concentration, exceeding 0.06 mass % in a plane perpendicular to the incident light direction.
11. The optical material for EUV lithography according to claim 1 , wherein the striae pitch is at most 10 μm.
12. An optical material for EUV lithography employing the silica glass containing TiO 2 , as defined in claim 1 .
13. The silica glass containing TiO 2 according to claim 2 , wherein the striae pitch is at most 10 μm.
14. The silica glass containing TiO 2 according to claim 3 , wherein the striae pitch is at most 10 μm.
15. The silica glass containing TiO 2 according to claim 4 , wherein the striae pitch is at most 10 μm.
16. The optical material for EUV lithography according to claim 3 , wherein the striae pitch is at most 10 μm.
17. The optical material for EUV lithography according to claim 7 , wherein the striae pitch is at most 10 μm.
18. An optical material for EUV lithography employing the silica glass containing TiO 2 , as defined in claim 3 .
19. An optical material for EUV lithography employing the silica glass containing TiO 2 , as defined in claim 7 .