Solid state image pickup device and method of fabricating the same
View Patent ↗Disclosed is a solid state image pickup device including a Si substrate, a conductive pattern such as transfer-accumulation electrodes and a buffer wiring formed above the Si substrate, an insulating film provided above the Si substrate in the state of covering the conductive pattern, and a shunt wiring composed of a metallic pattern formed above the insulating film in the state of being connected to the buffer wiring via a contact window formed in the insulating film. The portion of the shunt wiring in the vicinity of the bottom surface of the contact window contains at least one of silicon metal oxide or silicon metal nitride. The solid state image pickup device and a method of fabricating the same make it possible to suppress a rise in the contact resistance attendant on a heat treatment in a later step, in a structure in which various wirings and a light shielding film using a metallic material and a conductive pattern such as a Si substrate and a Si-containing electrode or wiring are brought into contact with each other, to improve propagation characteristics of various signals, and to contribute to provision of an image pickup device with a higher speed, a larger size, a higher image quality, etc.
1. A solid state image pickup device comprising:
a conductive pattern formed on a substrate;
an insulating film provided on said substrate in the state of covering said conductive pattern; and
a metallic pattern formed on said insulating film and making contact with said conductive pattern through a contact window formed in said insulating film,
wherein,
said metallic pattern at said contact window contains at least one of an oxide of silicon and a metal and a nitride of silicon and a metal.
2. A solid state image pickup device comprising:
an insulating film provided on a substrate; and
a metallic pattern formed on said insulating film and making contact with said substrate through a contact window formed in said insulating film,
wherein,
said metallic pattern at said contact window contains at least one of an oxide of silicon and a metal and a nitride of silicon and a metal.
3. The solid state image pickup device as set forth in claim 1 , wherein said metallic pattern is provided as a shunt wiring for impressing a voltage on said conductive pattern, and said substrate is comprised of silicon.
4. The solid state image pickup device as set forth in claim 2 , wherein said metallic pattern is provided as a light shielding film, and said substrate is comprised of silicon.
5. The solid state image pickup device as set forth in claim 1 , wherein an in-layer lens having a planarized surface is provided on the upper side of said substrate.
6. The solid state image pickup device as set forth in claim 1 , wherein the metal of said metallic pattern is the same as said metal.
7. The solid state image pickup device as set forth in claim 2 , wherein the metal of said metallic pattern is the same as said metal.
8. The solid state image pickup device as set forth in claim 1 , wherein said metal is a high melting point metal.
9. The solid state image pickup device as set forth in claim 2 , wherein said metal is a high melting point metal.